HGTP3N60A4 Fairchild Semiconductor, HGTP3N60A4 Datasheet

IGBT N-CH SMPS 600V 17A TO220AB

HGTP3N60A4

Manufacturer Part Number
HGTP3N60A4
Description
IGBT N-CH SMPS 600V 17A TO220AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of HGTP3N60A4

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 3A
Current - Collector (ic) (max)
17A
Power - Max
70W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
HGTP3N60A4_NL
HGTP3N60A4_NL

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Company
Part Number
Manufacturer
Quantity
Price
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Manufacturer:
LT
Quantity:
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Part Number:
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Manufacturer:
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Quantity:
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600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S and the HGTP3N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25
150
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49327.
Ordering Information
NOTE: When ordering, use the entire part number.
Symbol
©2003 Fairchild Semiconductor Corporation
HGTD3N60A4S
HGTP3N60A4
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
o
PART NUMBER
C.
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
G
TO-252AA
TO-220AB
PACKAGE
E
C
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
Data Sheet
3N60A4
3N60A4
BRAND
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
o
C and
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
Features
• >100kHz Operation at 390V, 3A
• 200kHz Operation at 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T
• 12mJ E
• Low Conduction Loss
• Related Literature
Packaging
HGTD3N60A4S, HGTP3N60A4
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
COLLECTOR
AS
August 2003
(FLANGE)
Capability
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
JEDEC TO-252AA
G
JEDEC TO-220AB
E
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
COLLECTOR
HGTD3N60A4S, HGTP3N60A4 Rev. B1
(FLANGE)
G
C
4,587,713
4,644,637
4,801,986
4,883,767
E
J
= 125
o
C

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HGTP3N60A4 Summary of contents

Page 1

... Data Sheet 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on- ...

Page 2

... ON2 E OFF ALL TYPES 600 CES 17 C25 8 C110 GES 30 GEM 15A at 600V 12mJ 0. -55 to 150 J STG 300 L 260 PKG MIN TYP 600 - 125 2 125 C - 1.6 J 4.5 6 15V 8 15V - 20V - HGTD3N60A4S, HGTP3N60A4 Rev. B1 UNITS MAX UNITS - 250 A 2.0 mA 2.7 V 2.2 V 7.0 V 250 ...

Page 3

... IGBT. The diode type is specified 150 15V 200 100 200 300 400 V , COLLECTOR TO EMITTER VOLTAGE ( 390V 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTD3N60A4S, HGTP3N60A4 Rev. B1 MAX UNITS 165 ns 100 100 1.8 C/W ON2 500 600 700 ...

Page 4

... PULSE DURATION = 250 125 COLLECTOR TO EMITTER VOLTAGE (V) CE 140 1mH 390V G CE 120 100 125 12V OR 15V 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 1mH 390V 125 12V 125 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT HGTD3N60A4S, HGTP3N60A4 Rev 150 15V ...

Page 5

... COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA 100 , G(REF 600V 200V V = 400V GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS 1000 125 1mH 390V TOTAL ON2 OFF 100 100 R , GATE RESISTANCE ( ) G HGTD3N60A4S, HGTP3N60A4 Rev 12V OR 15V GE = 12V OR 15V 15V 1000 ...

Page 6

... FREQUENCY = 1MHz 60 80 100 FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE - RECTANGULAR PULSE DURATION (s) 1 2.7 DUTY CYCLE < 0.5%, T PULSE DURATION = 250 s, 2.6 2.5 2 4. 2.2 2 1. GATE TO EMITTER VOLTAGE ( GATE TO EMITTER VOLTAGE DUTY FACTOR PEAK qJC - HGTD3N60A4S, HGTP3N60A4 Rev qJC ...

Page 7

... OFF is the integral of the ON2 during turn-on and the integral of the instantaneous power loss (I ) during turn-off. All tail losses are included in the ; i.e., the collector current equals zero OFF = 0). HGTD3N60A4S, HGTP3N60A4 Rev. B1 10% E ON2 d(ON d(ON)I ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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