HGTP3N60A4 Fairchild Semiconductor, HGTP3N60A4 Datasheet - Page 5

• Manufacturer Part Number: HGTP3N60A4
• Description: IGBT N-CH SMPS 600V 17A TO220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP3N60A4

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 3A
• Current - Collector (ic) (max): 17A
• Power - Max: 70W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: HGTP3N60A4_NL; HGTP3N60A4_NL

Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
112
104
20
16
12
250
200
150
100
96
88
80
72
64
56
48
8
4
0
50
0
4
1
25
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
FIGURE 13. TRANSFER CHARACTERISTIC
R
R
E
G
I
I
I
TOTAL
G
CE
CE
CE
= 50 , L = 1mH, V
EMITTER CURRENT
= 50 , L = 1mH, V
TEMPERATURE
I
CE
= 4.5A
= 3A
= 1.5A
T
, COLLECTOR TO EMITTER CURRENT (A)
V
T
6
= E
50
J
2
GE
J
= 125
= 25
ON2
, GATE TO EMITTER VOLTAGE (V)
T
C
, CASE TEMPERATURE (
o
o
+ E
C
C
OFF
8
75
3
CE
CE
CE
= 390V, V
= 10V
= 390V
T
J
100
= -55
10
4
V
GE
V
V
V
GE
GE
GE
GE
o
= 15V
= 15V, T
C
Unless Otherwise Specified (Continued)
= 15V, T
= 12V, T
= 12V, T
o
C)
125
12
5
J
J
J
J
= 125
= 25
= 25
= 125
o
o
o
C
C
C
o
150
C
14
6
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
1000
16
14
12
10
100
96
88
80
72
64
56
48
40
30
8
6
4
2
0
1
0
3
I
R
G(REF)
FIGURE 14. GATE CHARGE WAVEFORMS
G
E
T
J
TOTAL
= 50 , L = 1mH, V
= 125
CURRENT
I
CE
4
= 1mA, R
V
V
CE
CE
, COLLECTOR TO EMITTER CURRENT (A)
= E
2
10
o
C, L = 1mH, V
= 600V
= 200V
ON2
I
I
CE
R
CE
I
8
CE
G
Q
L
= 4.5A
, GATE RESISTANCE ( )
G
+ E
= 1.5A
= 100 , T
= 3A
, GATE CHARGE (nC)
CE
OFF
3
12
= 390V
V
CE
T
CE
J
T
J
= 125
J
= 390V, V
HGTD3N60A4S, HGTP3N60A4 Rev. B1
= 25
= 400V
= 25
16
100
o
o
o
4
C
C, V
C, V
GE
GE
GE
20
= 15V
= 12V OR 15V
= 12V OR 15V
5
24
1000
28
6