FDC6401N Fairchild Semiconductor, FDC6401N Datasheet

FDC6401N

Manufacturer Part Number

FDC6401N

Description

MOSFET N-CH DUAL 20V SSOT-6

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Type

Power MOSFETr

Datasheet

1.FDC6401N.pdf (5 pages)

Specifications of FDC6401N

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

70 mOhm @ 3A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

4.6nC @ 4.5V

Input Capacitance (ciss) @ Vds

324pF @ 10V

Power - Max

700mW

Mounting Type

Surface Mount

Package / Case

6-SSOT, SuperSOT-6

Configuration

Dual

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.07 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

10 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 12 V

Continuous Drain Current

3 A

Power Dissipation

960 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.07Ohm

Drain-source On-volt

20V

Gate-source Voltage (max)

±12V

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SuperSOT

Module Configuration

Dual

Continuous Drain Current Id

Drain Source Voltage Vds

20V

On Resistance Rds(on)

70mohm

Rds(on) Test Voltage Vgs

4.5V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDC6401N
FDC6401NTR

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Price

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Current page: 1 of 5
Download datasheet (77Kb)

FDC6401N

Dual N-Channel 2.5V Specified PowerTrench MOSFET

General Description

This Dual N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R

Applications

2001 Fairchild Semiconductor Corporation

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

DC/DC converter

Battery Protection

Power Management

DSS

GSS

, T

Device Marking

STG

SuperSOT

.401

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

DS(ON)

-6

and fast switching speed.

– Continuous

– Pulsed

FDC6401N

Device

Parameter

=25

C unless otherwise noted

Reel Size

7’’

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

Features

3.0 A, 20 V.

Low gate charge (3.3 nC)

High performance trench technology for extremely

low R

High power and current handling capability

DS(ON)

Tape width

DS(ON)

–55 to +150

Ratings

8mm

0.96

130

3.0

0.9

0.7

= 70 m

= 95 m

@ V

October 2001

FDC6401N Rev C (W)

= 4.5 V

= 2.5 V

3000 units

Quantity

Units

C/W

Related parts for FDC6401N

FDC6401N Summary of contents

Page 1

... High power and current handling capability =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 7’’ October 2001 4.5 V DS(ON 2.5 V DS(ON Ratings Units 3 0.96 W 0.9 0.7 –55 to +150 C 130 C/W 60 C/W Tape width Quantity 8mm 3000 units FDC6401N Rev C (W) ...

Page 2

... CA b) 140 °C/W when 2 mounted on a .004 in pad copper Min Typ Max Units mV –100 nA 100 nA 0.5 0.9 1.5 V –3 mV 106 324 1 3.3 4.6 nC 0.95 nC 0.7 nC 0.8 A 0.7 1 180 C°/W when mounted on a minimum pad. FDC6401N Rev C (W) ...

Page 3

... C 1 0.1 0.01 0.001 0.0001 2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.5V 3.0V 3.5V 4. DIRAIN CURRENT ( 1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6401N Rev C ( 1.2 ...

Page 4

... Transient thermal response will change depending on the circuit board design MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 180°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 180°C/W JA P(pk ( Duty Cycle 100 FDC6401N Rev C (W) 20 1000 / t 2 1000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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