FDC6401N Fairchild Semiconductor, FDC6401N Datasheet - Page 2

• Manufacturer Part Number: FDC6401N
• Description: MOSFET N-CH DUAL 20V SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDC6401N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 324pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.07 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3 A
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.07Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Module Configuration: Dual
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6401N; FDC6401NTR

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
JA
GS(th)
DSS
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) 130 C/W when
mounted on a 0.125
in
copper.
2
Parameter
pad of 2 oz.
(Note 2)
(Note 2)
CA
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
b) 140 °C/W when
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
= 25°C unless otherwise noted
= 0 V,
= 16 V,
= 12 V,
= –12 V
= V
= 4.5 V,
= 2.5 V,
= 4.5 V, I
= 4.5 V,
= 5V,
= 10 V,
= 10 V,
= 4.5 V, R
= 10 V,
= 4.5 V
= 0 V,
mounted on a .004 in
pad of 2 oz copper
Test Conditions
GS
,
I
D
S
GEN
= 3.0 A,T
= 0.8 A
I
V
V
I
I
V
I
V
I
D
V
I
D
D
D
I
D
D
D
GS
DS
DS
GS
DS
= 250 A
= 3.0 A
= 2.5 A
= 3.0 A
= 3.0 A,
= 250 A
= 1 A,
= 6
= 0 V
= 5 V
= 0 V
= 0 V
= 0 V,
2
J
=125 C
(Note 2)
Min
0.5
20
12
c) 180 C°/W when mounted on a
minimum pad.
Typ Max Units
0.95
324
0.9
1.6
3.3
0.7
0.7
13
–3
50
66
71
10
82
42
13
5
7
–100
100
106
1.5
4.6
0.8
1.2
70
95
10
14
23
1
3
FDC6401N Rev C (W)
mV/ C
mV/ C
m
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A