FDC6561AN Fairchild Semiconductor, FDC6561AN Datasheet - Page 5

• Manufacturer Part Number: FDC6561AN
• Description: MOSFET N-CHAN DUAL 30V SSOT6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDC6561AN

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 95 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 220pF @ 15V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.095Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 2.5A
• Power Dissipation: 960mW
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SuperSOT
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.095 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.5 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 95mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6561ANTR

Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
ACLV
H3TRB
HAST2
HTGB
HTRB
PRCL
TMCL1
Device #6 FDN338P
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
ACLV
H3TRB
HAST2
HTGB
HTRB
PRCL
TMCL1
UHAST1 X
Device #7 FDN371N
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
HAST2
P/C
X
X
X
X
P/C
X
X
X
X
P/C
X
TTJ23
003
TTJ23
003
P/C
P/C
P/C
Standard
JESD22-A102 100%RH, 121C 96
JESD22-A101B85%RH, 85C,
JESD22-A110 85%RH, 110C,
JESD22-A108 150C, 25V
JESD22-A108 150C, 24V
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
Standard
JESD22-A102 100%RH, 121C 96
JESD22-A101B85%RH, 85C,
JESD22-A110 85%RH, 110C,
JESD22-A108 150C, 8V
JESD22-A108 150C, 16V
MIL-
STD-750-1036
JESD22-A104 -65C, 150C
JESD22-A118 100%RH, 121C 96
Standard
JESD22-A110 85%RH, 110C,
Standard
JESD22-A113
Standard
JESD22-A113
Standard
JESD22-A113
Conditions
24V
24V
Delta 100CC, 2
Min cycle
Conditions
16V
16V
Delta 100?C, 2
Min cycle
Conditions
16V
Conditions
Conditions
Conditions
Readpoints
TP1
168
132
168
168
5000
100
Readpoints
TP1
168
132
168
168
5000
100
Readpoints
TP1
132
TP2
500
264
500
500
10000
500
TP2
500
264
500
500
10000
500
TP2
264
TP3
1000
1000
1000
TP3
1000
1000
1000
TP3
Read-
points
Read-
points
Read-
points
Samples
A
77
77
77
77
77
77
77
Samples
A
77
77
77
77
77
77
77
77
Samples
A
77
Sample
Sample
Sample
A
0
A
A
0
0
B
77
77
77
77
77
77
77
77
B
0
Pg. 5