FDMA1023PZ Fairchild Semiconductor, FDMA1023PZ Datasheet - Page 2
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FDMA1023PZ
Manufacturer Part Number
FDMA1023PZ
Description
MOSFET P-CHAN DUAL MICROFET2X2
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMA1023PZ.pdf
(7 pages)
Specifications of FDMA1023PZ
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
72 mOhm @ 3.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Input Capacitance (ciss) @ Vds
655pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.072 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3.7 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA1023PZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMA1023PZ
Manufacturer:
FSC
Quantity:
33 400
Company:
Part Number:
FDMA1023PZ
Manufacturer:
Fairchild Semiconductor
Quantity:
30 055
Part Number:
FDMA1023PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDMA1023PZ Rev.C4
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
rr
DS(on)
FS
BV
GS(th)
iss
oss
rss
SD
g(TOT)
gs
gd
rr
V
Symbol
DSS
T
T
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum Continuous Source-Drain Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
J
= 25°C unless otherwise noted
I
I
V
V
V
I
V
V
V
V
V
V
V
I
V
f = 1MHz
V
V
V
V
D
D
D
F
DS
GS
GS
GS
GS
GS
GS
GS
DS
DD
GS
DD
GS
GS
DS
= –3.7A, di/dt = 100A/ s
= –250 A, V
= –250 A, referenced to 25°C
= –250 A, referenced to 25°C
= –16V, V
= –5V, I
= –4.5V
= 0V, I
= ±8V, V
= V
= –4.5V, I
= –2.5V, I
= –1.8V, I
= –1.5V, I
= –4.5V, I
= –10V, V
= –10V, I
= –4.5V, R
= –10V, I
DS
2
Test Conditions
, I
S
D
= –1.1A
D
DS
D
D
D
D
= –3.7A
GS
GS
GS
= –250 A
D
D
D
GEN
= –1A
= –3.7A
= 0V
= –3.7A,T
= –3.7A
= –3.2A
= –2.0A
= –1.0A
= 0V,
= 0V
= 0V
= 6
(Note 2)
J
=125°C
–0.4
Min
–20
–0.8
–0.7
490
100
100
130
8.6
0.7
2.0
Typ
2.5
90
12
64
37
32
15
–11
60
75
81
12
9
–1.1
–1.2
–1.0
655
135
Max
130
195
135
103
±10
48
23
72
95
91
18
22
60
12
–1
www.fairchildsemi.com
mV/°C
mV/°C
Units
m
nC
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
A
V
V
S
A
A