FDMA1023PZ Fairchild Semiconductor, FDMA1023PZ Datasheet - Page 4

• Manufacturer Part Number: FDMA1023PZ
• Description: MOSFET P-CHAN DUAL MICROFET2X2
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA1023PZ

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 3.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 655pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.072 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.7 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA1023PZTR

FDMA1023PZ Rev.C4
Typical Characteristics
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
0.0
6
5
4
3
2
1
0
Figure 3. Normalized On-Resistance
Figure 1.
-50
0.0
Figure 5. Transfer Characteristics
PULSE DURATION = 300 s
DUTY CYCLE = 2.0%MAX
V
DD
V
-V DS , DRAIN TO SOURCE VOLTAGE (V)
I
-25
= -5V
D
GS
vs Junction Temperature
= -3.7A
-V
T
= -4.5V
GS
J
, JUNCTION TEMPERATURE
0.5
0.5
On Region Characteristics
, GATE TO SOURCE VOLTAGE (V)
0
25
V
V
V
V
V
GS
T
GS
GS
GS
GS
J
PULSE DURATION = 300 s
DUTY CYCLE = 2.0%MAX
1.0
= 125
= -4.5V
= -3.0V
= -2.5V
= -2.0V
1.0
= -1.8V
50
o
T
C
J
75
= 25°C unless otherwise noted
T
1.5
100
1.5
J
V
GS
= -55
(
o
T
C
J
= -1.5V
)
= 25
o
125
C
o
C
2.0
150
2.0
4
1E-3
1E-4
0.01
200
160
120
2.6
2.2
1.8
1.4
1.0
0.6
0.1
10
80
40
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
0
Figure 6.
I
V
V
PULSE DURATION = 300 s
DUTY CYCLE = 2.0%MAX
D
GS
-V
GS
= -1.85A
T
SD
= 0V
= -1.5V
0.2
-V
J
= 125
, BODY DIODE FORWARD VOLTAGE (V)
1
GS
1
Normalized On-Resistance
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
V
Source Voltage
o
GS
Source to Drain Diode
C
0.4
-I D , DRAIN CURRENT(A)
T
= -3.0V
J
2
= 25
2
0.6
o
C
T
J
3
PULSE DURATION = 300 s
DUTY CYCLE = 2.0%MAX
= -55
3
T
J
0.8
V
= 25
T
GS
o
J
C
= 125
= -1.8V
o
C
4
4
1.0
o
V
V
C
V
GS
GS
GS
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= -2.5V
= -2.0V
= -4.5V
5
1.2
5
1.4
6
6