FDS4953 Fairchild Semiconductor, FDS4953 Datasheet - Page 3

• Manufacturer Part Number: FDS4953
• Description: MOSFET P-CH DUAL 30V 5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4953

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 5V
• Input Capacitance (ciss) @ Vds: 528pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 46mohm
• Rds(on) Test Voltage Vgs: -10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4953

Typical Characteristics
15
12
30
20
10
9
6
3
0
0
1.6
1.4
1.2
0.8
0.6
1
Figure 3. On-Resistance Variation with
0
1
Figure 1. On-Region Characteristics.
-50
Figure 5. Transfer Characteristics.
V
GS
V
V
GS
DS
I
D
= -10V
1.5
= -5A
-25
= -10V
= -5V
1
-V
-V
DS
GS
0
T
, DRAIN TO SOURCE VOLTAGE (V)
2
, GATE TO SOURCE VOLTAGE (V)
-6.0V
J
, JUNCTION TEMPERATURE (
Temperature.
2
25
2.5
V
-5.0V
50
3
75
3
V
-4.5V
T
A
4
100
= -55
3.5
-4.0V
o
o
C
C)
125
-3.5V
-3.0V
125
5
4
o
150
C
25
o
C
175
4.5
6
Figure 6. Body Diode Forward Voltage Variation
0.25
0.15
0.05
0.0001
0.2
0.1
0.001
0
0.01
with Source Current and Temperature.
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
100
0.1
10
2
1
2
1
0
0
T
Drain Current and Gate Voltage.
A
= 25
V
V
GS
GS
o
Gate-to-Source Voltage.
0.2
=-4.0V
C
=0V
-V
-V
SD
6
-4.0V
GS
4
, BODY DIODE FORWARD VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
A
0.4
= 125
T
-5.0V
A
-I
D
= 125
, DRAIN CURRENT (A)
o
C
-6.0V
12
0.6
o
C
25
6
-7.0V
o
C
0.8
18
-55
-8.0V
o
C
1
8
24
FDS4953 Rev D1(W)
I
-10V
D
1.2
= -2.5A
1.4
30
10