FDS4953 Fairchild Semiconductor, FDS4953 Datasheet - Page 4

• Manufacturer Part Number: FDS4953
• Description: MOSFET P-CH DUAL 30V 5A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4953

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 5V
• Input Capacitance (ciss) @ Vds: 528pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 46mohm
• Rds(on) Test Voltage Vgs: -10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4953

Typical Characteristics
0.01
10
100
0.1
8
6
4
2
0
10
Figure 9. Maximum Safe Operating Area.
1
0
Figure 7. Gate Charge Characteristics.
0.1
0.001
I
D
0.01
R
0.1
= -5A
SINGLE PULSE
DS(ON)
R
0.0001
1
V
JA
T
GS
A
= 135
LIMIT
= 25
= -10V
D = 0.5
2
o
o
C/W
C
0.2
-V
0.1
0.05
DS
0.02
, DRAIN-SOURCE VOLTAGE (V)
Q
SINGLE PULSE
g
1
0.01
, GATE CHARGE (nC)
4
0.001
DC
10s
Figure 11. Transient Thermal Response Curve.
1s
6
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100ms
V
D S
10
= -5V
10ms
0.01
1ms
8
-15V
100 s
-10V
10
100
0.1
800
700
600
500
400
300
200
100
50
40
30
20
10
0
0.001
0
0
Figure 8. Capacitance Characteristics.
C
RSS
Figure 10. Single Pulse Maximum
1
5
0.01
C
-V
OSS
DS
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
10
0.1
C
t
10
1
ISS
, TIME (sec)
15
1
P(pk)
Duty Cycle, D = t
20
T
R
R
J
JA
- T
SINGLE PULSE
100
R
JA
(t) = r(t) + R
JA
T
A
t
= 135 °C/W
A
1
10
= 135°C/W
= P * R
t
= 25°C
2
FDS4953 Rev D1(W)
25
f = 1 MHz
V
GS
JA
= 0 V
1
JA
(t)
/ t
100
2
30
1000