FDS8926A Fairchild Semiconductor, FDS8926A Datasheet
FDS8926A
Manufacturer Part Number
FDS8926A
Description
MOSFET N-CH DUAL 30V 5.5A SO-8
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDS8926A.pdf
(5 pages)
Specifications of FDS8926A
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 5.5A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
28nC @ 4.5V
Input Capacitance (ciss) @ Vds
900pF @ 10V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS8926A
FDS8926ATR
FDS8926ATR
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS8926A
Manufacturer:
Fairchild Semiconductor
Quantity:
62 869
Part Number:
FDS8926A
Manufacturer:
FSC
Quantity:
20 000
Part Number:
FDS8926A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS8926A_NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
© 1998 Fairchild Semiconductor Corporation
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
FDS8926A
Dual N-Channel Enhancement Mode Field Effect Transistor
Absolute Maximum Ratings
DSS
GSS
D
J
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These devices
are particularly suited for low voltage applications such as disk
drive motor control, battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
,T
JA
JC
STG
SOT-23
D1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
SO-8
D1
D2
- Pulsed
D2
SuperSOT
pin 1
TM
S1
-6
T
G1
A
= 25
S2
o
C unless other wise noted
SuperSOT
G2
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1a)
(Note 1)
(Note 1a)
TM
-8
Features
SO-8
5.5 A, 30 V. R
High density cell design for extremely low R
Combines low gate threshold (fully enhanced at 2.5V) with
high breakdown voltage of 30 V.
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
6
5
8
7
FDS8926A
R
-55 to 150
DS(ON)
DS(ON)
5.5
1.6
0.9
30
±8
20
78
40
2
1
SOT-223
= 0.030
= 0.038
@ V
@ V
GS
GS
February 1998
= 4.5 V
= 2.5 V.
1
4
SOIC-16
3
2
DS(ON)
FDS8926A Rev.B
.
Units
°C/W
°C/W
°C
W
V
V
A
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FDS8926A Summary of contents
Page 1
... Dual MOSFET in surface mount package. TM SO-8 SuperSOT - unless other wise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) February 1998 = 0.030 @ V = 4.5 V DS(ON 0.038 @ V = 2.5 V. DS(ON) GS DS(ON) SOIC-16 SOT-223 FDS8926A 30 ±8 5 1.6 1 0.9 -55 to 150 78 40 FDS8926A Rev.B . Units °C °C/W °C/W ...
Page 2
... Min Typ Max 55° 100 -100 0.4 0. 0.025 0.03 T =125°C 0.037 0.052 J 0.031 0.038 20 20 900 410 110 19 6.3 1.3 0.68 1.2 (Note 135 C 0.003 C 0.02 in pad of 2oz copper. Units µA µ guaranteed FDS8926A Rev.B ...
Page 3
... Figure 6. Body Diode Forward Voltage = 2.0V 2.5V 3.0V 3.5V 4. DRAIN CURRENT ( 2. 125° 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C A 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature 1.2 FDS8926A Rev.B ...
Page 4
... Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec iss C oss C rss MHz 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135° C 25°C A 0.1 0 100 SINGLE PULSE TIME (SEC) Dissipation. R ( 135 °C/W JA P(pk ( Duty Cycle 100 30 300 300 FDS8926A Rev.B ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...