FDS8926A Fairchild Semiconductor, FDS8926A Datasheet - Page 2

• Manufacturer Part Number: FDS8926A
• Description: MOSFET N-CH DUAL 30V 5.5A SO-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDS8926A

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 900pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS8926A; FDS8926ATR

Electrical Characteristics (
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CH ARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
DSS
GSSF
GSSR
D(ON)
D(on)
r
D(off)
f
S
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FS
BV
GS(th)
V
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
GS(th)
design while R
Scale 1 : 1 on letter size paper
DSS
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
/ T
/ T
J
J
CA
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
is determined by the user's board design.
(Note 2)
T
A
a. 78
= 25
(Note 2)
pad of 2oz copper.
O
C/W on a 0.5 in
O
C unless otherwise noted )
2
Conditions
V
I
V
V
V
V
I
V
V
V
V
V
V
V
V
V
V
D
D
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DS
GS
DS
GS
GS
= 250 µA, Referenced to 25
= 250 µA, Referenced to 25
= 6 V, I
= 24 V, V
= V
= 5 V, I
= 10 V, V
= 10 V, I
= 0 V, I
= 8 V, V
= -8 V, V
= 4.5 V, I
= 2.5 V, I
= 4.5 V, V
= 4.5 V , R
= 4.5 V
= 0 V, I
GS
, I
D
D
DS
D
S
D
DS
= 250 µA
= 250 µA
= 5.5 A
D
= 1.3 A
= 1 A
GS
GS
D
D
= 0 V
DS
= 0 V
= 5.5 A,
GEN
= 5.5 A
= 4.5 A
= 0 V
b. 125
= 0 V,
= 5 V
pad of 2oz copper.
= 6
O
C/W on a 0.02 in
(Note 2)
T
T
J
J
o
o
C
C
= 55°C
=125°C
2
Min
0.4
30
20
0.025
0.037
0.031
Typ
0.67
19.8
0.68
900
410
110
6.3
32
20
19
42
13
-3
6
2
c. 135
pad of 2oz copper.
0.052
0.038
Max
O
-100
0.03
100
C/W on a 0.003 in
1.3
1.2
10
12
31
67
24
28
1
1
JC
is guaranteed by
FDS8926A Rev.B
mV /
mV /
Units
µA
µA
nC
nA
nA
ns
V
V
A
S
A
V
pF
pF
pF
o
C
2
o
C