AO6602 Alpha & Omega Semiconductor Inc, AO6602 Datasheet - Page 3

• Manufacturer Part Number: AO6602
• Description: MOSFET N/P-CH COMPL 30V 6-TSOP
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO6602

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2.7A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 15V
• Power - Max: 1.15W
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1077-2

Rev 5: Mar 2011
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
6
3
0
70
60
50
40
30
120
100
80
60
40
20
0
0
10V
2
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
Fig 1: On-Region Characteristics (Note E)
25° C
1
2
7V
4
V
V
Gate Voltage (Note E)
GS
GS
4.5V
=10V
2
=4.5V
V
4
DS
V
(Volts)
(Note E)
GS
I
D
6
(A)
(Volts)
125° C
3
6
8
I
V
D
8
4
GS
=3.5A
3.5V
4V
www.aosmd.com
=3V
10
10
5
10
1.0E+02
1.0E+01
1.0E+00
1.8
1.6
1.4
1.2
0.8
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
8
6
4
2
0
1
0.5
0
Figure 4: On-Resistance vs. Junction Temperature
40
0.0
V
Figure 2: Transfer Characteristics (Note E)
DS
1
25
=5V
Figure 6: Body-Diode Characteristics (Note E)
V
I
1.5
0.2
D
GS
=3.5A
125° C
125° C
50
=10V
Temperature (° C)
2
0.4
V
GS
75
(Note E)
(Volts)
2.5
V
SD
0.6
(Volts)
100
V
I
3
D
GS
=2A
25° C
=4.5V
0.8
25° C
125
3.5
17
10
18
1.0
150
5
2
0
4
Page 3 of 9
AO6602
4.5
175
1.2