AO6602 Alpha & Omega Semiconductor Inc, AO6602 Datasheet - Page 3
![MOSFET N/P-CH COMPL 30V 6-TSOP](/photos/5/43/54361/ao6602_sml.jpg)
AO6602
Manufacturer Part Number
AO6602
Description
MOSFET N/P-CH COMPL 30V 6-TSOP
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet
1.AO6602.pdf
(9 pages)
Specifications of AO6602
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.1A, 2.7A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
8.5nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 15V
Power - Max
1.15W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1077-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO6602
Manufacturer:
AOS/ 万代
Quantity:
20 000
Part Number:
AO6602L
Manufacturer:
AOS/ 万代
Quantity:
20 000
Rev 5: Mar 2011
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
6
3
0
70
60
50
40
30
120
100
80
60
40
20
0
0
10V
2
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
Fig 1: On-Region Characteristics (Note E)
25° C
1
2
7V
4
V
V
Gate Voltage (Note E)
GS
GS
4.5V
=10V
2
=4.5V
V
4
DS
V
(Volts)
(Note E)
GS
I
D
6
(A)
(Volts)
125° C
3
6
8
I
V
D
8
4
GS
=3.5A
3.5V
4V
www.aosmd.com
=3V
10
10
5
10
1.0E+02
1.0E+01
1.0E+00
1.8
1.6
1.4
1.2
0.8
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
8
6
4
2
0
1
0.5
0
Figure 4: On-Resistance vs. Junction Temperature
40
0.0
V
Figure 2: Transfer Characteristics (Note E)
DS
1
25
=5V
Figure 6: Body-Diode Characteristics (Note E)
V
I
1.5
0.2
D
GS
=3.5A
125° C
125° C
50
=10V
Temperature (° C)
2
0.4
V
GS
75
(Note E)
(Volts)
2.5
V
SD
0.6
(Volts)
100
V
I
3
D
GS
=2A
25° C
=4.5V
0.8
25° C
125
3.5
17
10
18
1.0
150
5
2
0
4
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