AOD604 Alpha & Omega Semiconductor Inc, AOD604 Datasheet
AOD604
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AOD604 Summary of contents
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... AOD604 Complementary Enhancement Mode Field Effect Transistor General Description The AOD604 uses advanced trench technology MOSFETs to provide excellent R and low gate charge. DS(ON) The complementary MOSFETs may be used in H-bridge, Inverters and other applications. -RoHS Compliant -Halogen Free* TO-252-5L D-PAK Bottom View ...
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... AOD604 N-Channel MOSFET Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AOD604 N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V (Volts) DS Fig 1: On-Region Characteristics =4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 125° 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd =3. 1.8 1.6 1.4 1.2 V =10V ...
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... AOD604 N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =20V (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =175°C, T J(Max) R DS(ON) limited 10.0 1.0 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note =7.5°C 0.1 Single Pulse 0.01 ...
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... AOD604 N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 T =25° =150° 0.000001 0.00001 Time in avalanche, t Figure 12: Single Pulse Avalanche capability (°C) CASE Figure 14: Current De-rating (Note descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse ...
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... AOD604 P-Channel MOSFET Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AOD604 P-Channel MOSFET Electrical Characteristics (T 30 -5V -10V (Volts) DS Fig 1: On-Region Characteristics 80 V =-4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 120 100 25°C 20 2.00E+00 4.00E+00 6.00E+00 8.00E+00 1.00E+01 -V (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. =25° C unless otherwise noted) ...
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... AOD604 P-Channel MOSFET Electrical Characteristics ( =-20V =- (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =175°C, T J(Max) R 10.0 DS(ON) limited 1.0 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note =5°C 0.1 Single Pulse 0.01 0.00001 0.0001 Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & ...
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... AOD604 P-Channel MOSFET Electrical Characteristics (T 100 T =25° =150° 0.000001 0.00001 Time in avalanche, t Figure 12: Single Pulse Avalanche capability 100 T (° C) CASE Figure 14: Current De-rating (Note descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 ...
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... AOD604 N-Channel + VDC - Vgs Ig Vds Vgs Rg Vgs Vds Id Vgs Rg Vgs Vds + DUT Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Vgs 10V + Vds VDC - DUT Resistive Switching Test Circuit & Waveforms RL Vds + DUT Vdd VDC ...
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... AOD604 P-Channel - VDC + Vgs Ig Vds Vgs Rg Vgs L Vds Id Vgs Rg DUT Vgs Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Vgs -10V - Vds VDC + DUT Resistive Switching Test Circuit & Waveforms RL Vgs - DUT Vdd ...