FDC6301N Fairchild Semiconductor, FDC6301N Datasheet

IC FET DGTL N-CH DUAL 25V SSOT6

FDC6301N

Manufacturer Part Number
FDC6301N
Description
IC FET DGTL N-CH DUAL 25V SSOT6
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDC6301N

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 Ohm @ 400mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
220mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
0.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
9.5pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
0.25 S
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
- 0.5 V to 8 V
Continuous Drain Current
0.22 A
Power Dissipation
900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
220mA
Drain Source Voltage Vds
25V
On Resistance Rds(on)
5ohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
850mV
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6301NTR

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Part Number:
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This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: Mendoza, Joseph
E-mail: Joseph.Mendoza@notes.fairchildsemi.com
Phone: 63-32-400534
Implementation of change:
Expected 1st Device Shipment Date: 2007/11/24
Earliest Year/Work Week of Changed Product: D0744
Change Type Description: Die Attach Method
Description of Change (From): TiNiAg Backmetal and eutectic die attach process
Description of Change (To): TiNiAg backmetal and skip cure adhesive die attach process
Reason for Change : Process and Device improvement
Qual/REL Plan Numbers : Q20070126
Qualification :
Adhesive Die Attach and TiNiAg backmetal Qualification builds for SSOT-6L pass
assembly level and reliability stress test requirements. Adhesive Die Attach process
and TiNiAg backmetal is recommended for use on SSOT-6L package.
Results/Discussion
Test: (Autoclave)
Lot
Q20070126AAACLV
Q20070126ABACLV
Q20070126ACACLV
Test: (Power Cycle)
Lot
Q20070126AAPRCL
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Device
FDC6401N
Technical Contact:
Name: Mendoza, Joseph
E-mail: Joseph.Mendoza@notes.fairchildsemi.com
Phone: 63-32-400534
Device
FDC6401N
FDC6401N
FDC6401N
5000-CYCLES
0/77
96-HOURS
0/77
0/77
0/77
10000-CYCLES 15000-CYCLES Failure Code
0/77
Date Issued On : 2007/05/11
Date Created : 2007/03/30
Failure Code
PCN# : Q1071307
Pg. 1

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FDC6301N Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

... FDC6304P FDC6321C FDC634P_F073 FDC636P FDC638P_F073 FDC638P_NL FDC640P_F073 FDC640P_NL FDC642P_NB4N006 FDC654P FDC654P_NBGT007 FDC655BN FDC655BN_NL 0/77 0/77 0/77 1000 Failure Code 0/77 0/77 0/77 Failure Code Failure Code FDC6301N_NL FDC6303N FDC6320C FDC6321C_NL FDC634P_NF073 FDC636P_F073 FDC638P_NBAD009 FDC638P_SBAD006A FDC640P_NBAD004A FDC642P FDC642P_NF073 FDC654P_F073 FDC654P_NF073 FDC655BN_F073 FDC658AP Pg. 2 ...

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