AOP609 Alpha & Omega Semiconductor Inc, AOP609 Datasheet
AOP609
Specifications of AOP609
785-1142-1
785-1142-5
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AOP609 Summary of contents
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... AOP609 Complementary Enhancement Mode Field Effect Transistor General Description The AOP609 uses advanced trench technology MOSFETs to provide excellent R gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP609 is Pb- free (meets ROHS & Sony 259 specifications ...
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... AOP609 N Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...
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... AOP609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 10.0V 5. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 160 I 140 120 100 (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 15 4. =3. 2.2 2 =4.5V 1.8 1.6 1.4 1 ...
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... AOP609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 V =30V 4. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) limited 10.0 10ms 0.1s 1.0 10s T =150°C J(Max =25°C A 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA R =50°C/W θ ...
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... AOP609 P-Channel Electrical Characteristics (T Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage SD Maximum Body-Diode Continuous Current ...
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... AOP609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 -6.0V 25 -5. (Volts) DS Fig 1: On-Region Characteristics 120 110 100 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 180 160 140 120 100 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. ...
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... AOP609 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 V =-30V DS I =-3. (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C, T =25°C J(Max DS(ON) 10.0 limited 0.1s 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJA R =50°C/W θ ...