FDMA1027PT Fairchild Semiconductor, FDMA1027PT Datasheet - Page 2

• Manufacturer Part Number: FDMA1027PT
• Description: MOSFET P-CH 20V DUAL MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA1027PT

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 435pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA1027PTTR

©2009 Fairchild Semiconductor Corporation
FDMA1027PT Rev.B4
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
I
I
V
r
I
g
C
C
C
t
t
t
t
Q
Q
Q
I
V
t
Q
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
DS(on)
FS
BV
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
V
Symbol
DSS
T
T
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
On to State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum continuous Source-Drain Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
J
= 25 °C unless otherwise noted
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
V
T
V
V
V
I
I
I
V
V
D
F
D
D
DS
DD
GS
DD
GS
GS
GS
GS
GS
GS
J
GS
DS
GS
DS
GS
= -3.0 A, di/dt = 100 A/ s
= -250 A, referenced to 25 °C
= -250 A, V
= -250 A, referenced to 25 °C
= 125 °C
= -4.5 V
= -10 V, V
= -10 V, I
= -4.5 V, R
= -10 V, I
= V
= -4.5 V, I
= -2.5 V, I
= -1.8 V, I
= -4.5 V, I
= -4.5 V, V
= -5 V, I
= 0 V, I
= -16 V, V
= ±8 V, V
2
DS
Test Conditions
, I
S
D
D
D
= -1.1 A
D
DS
GS
= -3.0 A
= -250 A
D
D
GS
= -1.0 A
GEN
GS
D
D
DS
= -3.0 A
= -3.0 A
= -3.0 A ,
= 0 V
= -2.5 A
= -1.0 A
= 0 V,
= 0 V
= 0 V
= -5 V
= 6
(Note 2)
-0.4
-20
Min
-20
-0.8
435
-0.7
120
172
118
Typ
80
45
0.8
0.9
17
90
15
-12
11
6
2
7
9
6
4
±100
-1.1
-1.2
Max
-1.3
120
160
240
160
18
19
27
12
-1
www.fairchildsemi.com
6
mV/°C
mV/°C
Units
m
nC
pF
pF
pF
nC
nC
nC
ns
nA
ns
ns
ns
ns
A
V
A
S
V
V
A