FDG6332C_F085 Fairchild Semiconductor, FDG6332C_F085 Datasheet - Page 2
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FDG6332C_F085
Manufacturer Part Number
FDG6332C_F085
Description
MOSFET N/P-CH 20V SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDG6332C_F085.pdf
(8 pages)
Specifications of FDG6332C_F085
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 700mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
700mA, 600mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
113pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 4.5 V @ Q1
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.7 A @ Q1 or 0.6 A @ Q2
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDG6332C_F085TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG6332C_F085
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
g
I
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
DSS
GSSF
GSSF
D(on)
d(on)
r
d(off)
f
FS
BV
V
GS(th)
DS(on)
iss
oss
rss
g
gs
gd
GS(th)
DSS
T
T
DSS
J
J
/I
/I
GSSR
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
On–State Drain Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Parameter
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
T
A
V
V
I
I
V
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
For Q1:
V
V
For Q2:
V
V
For Q1:
V
V
For Q2:
V
V
D
D
D
D
= 25°C unless otherwise noted
GS
GS
DS
DS
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
GS
GS
DS
DS
DS
DS
DS
DS
DS
GS
DS
GS
DS
GS
DS
GS
= 250 A,Ref. to 25 C
= –250 A,Ref. to 25 C
= 250 A,Ref. To 25 C
= –250 A,Ref. to 25 C
=–4.5 V, I
=10 V, V
=–10 V, V
=10 V, V
=–10 V, V
=10 V, V
=–10 V, V
= 4.5 V,
= –4.5 V, R
= 4.5 V,
= –4.5 V, R
=10 V,
=–10 V,
=10 V,
=–10 V,
= 0 V,
= 0 V,
= 16 V,
= –16 V,
=
=
= V
= V
= 4.5 V, I
= 2.5 V, I
= 4.5 V, I
= –4.5 V, I
= –2.5 V, I
= 5 V
= –5 V
= 4.5 V, V
= –4.5 V, V
Test Conditions
GS
GS
12V , V
12 V, V
, I
, I
D
D
GS
GS
GS
= 250 A
= –250 A
D
GS
GS
GS
I
I
I
I
I
I
R
I
I
R
D
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
=–0.6 A,T
D
D
D
D
D
D
D
D
D
D
D
D
GEN
V
V
DS
DS
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
= 0 V, f=1.0MHz
GEN
GEN
GEN
= –0.5 A
= 1 A
= –1 A
= 0.7 A
= –0.6 A
= 250 A
= –250 A
=0.7 A
=0.6 A
=0.7A,T
= 0.7 A
= –0.6A
= –0.6 A
GS
GS
DS
DS
= 5 V
= –5 V
= 6
= 6
= 6
= 6
= 0 V
= 0 V
= 0 V
= 0 V
J
J
=125 C
=125 C
Q1
Q2
Q1
Q2
Q1
Q2
Min
–20
-0.6
0.6
20
–2
1
Typ Max Units
–1.2
–2.8
0.24
–14
180
293
247
300
470
400
113
114
1.1
2.8
1.8
5.5
1.5
1.7
1.1
1.4
0.3
0.3
0.4
14
34
24
16
14
3
9
5
7
9
6
–1.5
300
400
442
420
630
700
1.5
3.4
1.5
–1
100
100
10
11
15
25
18
12
FDG6332C_F085 Rev C2 (W)
1
3
2
mV/ C
mV/ C
m
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
A