FDG6332C_F085 Fairchild Semiconductor, FDG6332C_F085 Datasheet - Page 7

• Manufacturer Part Number: FDG6332C_F085
• Description: MOSFET N/P-CH 20V SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6332C_F085

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 700mA, 600mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 113pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V @ Q1
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.7 A @ Q1 or 0.6 A @ Q2
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDG6332C_F085TR

Typical Characteristics: P-Channel
0.01
0.1
Figure 19. Maximum Safe Operating Area.
0.001
10
5
4
3
2
1
0
Figure 17. Gate Charge Characteristics.
1
0.01
0.1
0.1
0
0.0001
1
I
D
= -0.6A
R
SINGLE PULSE
R
DS(ON)
V
JA
T
GS
A
= 415
0.3
= 25
= -4.5V
LIMIT
D = 0.5
o
o
C
C/W
-V
0.2
DS
0.1
0.05
SINGLE PULSE
0.02
, DRAIN-SOURCE VOLTAGE (V)
0.6
0.01
Q
1
g
, GATE CHARGE (nC)
0.001
0.9
DC
V
Figure 21. Transient Thermal Response Curve.
DS
1s
100ms
= -5V
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
10ms
1.2
10
1ms
-15V
100 s
0.01
1.5
-10V
1.8
100
t
1
, TIME (sec)
0.1
160
120
10
80
40
8
6
4
2
0
0.001
Figure 18. Capacitance Characteristics.
0
0
C
Figure 20. Single Pulse Maximum
RSS
C
0.01
OSS
-V
Power Dissipation.
5
DS
1
, DRAIN TO SOURCE VOLTAGE (V)
C
SINGLE PULSE TIME (SEC)
ISS
0.1
10
P(pk)
Duty Cycle, D = t
T
1
R
R
J
10
- T
JA
JA
(t) = r(t) * R
A
= 415 °C/W
t
1
= P * R
t
2
15
SINGLE PULSE
FDG6332C_F085 Rev C2 (W)
R
JA
10
T
A
= 415
V
= 25
f = 1MHz
JA
GS
1
JA
(t)
/ t
= 0 V
o
o
2
C/W
C
100
100
20