FDG6332C_F085 Fairchild Semiconductor, FDG6332C_F085 Datasheet - Page 7
![MOSFET N/P-CH 20V SC70-6](/photos/5/44/54450/fdg6332c_f085_sml.jpg)
FDG6332C_F085
Manufacturer Part Number
FDG6332C_F085
Description
MOSFET N/P-CH 20V SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDG6332C_F085.pdf
(8 pages)
Specifications of FDG6332C_F085
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 700mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
700mA, 600mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
113pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 4.5 V @ Q1
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.7 A @ Q1 or 0.6 A @ Q2
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDG6332C_F085TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG6332C_F085
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics: P-Channel
0.01
0.1
Figure 19. Maximum Safe Operating Area.
0.001
10
5
4
3
2
1
0
Figure 17. Gate Charge Characteristics.
1
0.01
0.1
0.1
0
0.0001
1
I
D
= -0.6A
R
SINGLE PULSE
R
DS(ON)
V
JA
T
GS
A
= 415
0.3
= 25
= -4.5V
LIMIT
D = 0.5
o
o
C
C/W
-V
0.2
DS
0.1
0.05
SINGLE PULSE
0.02
, DRAIN-SOURCE VOLTAGE (V)
0.6
0.01
Q
1
g
, GATE CHARGE (nC)
0.001
0.9
DC
V
Figure 21. Transient Thermal Response Curve.
DS
1s
100ms
= -5V
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
10ms
1.2
10
1ms
-15V
100 s
0.01
1.5
-10V
1.8
100
t
1
, TIME (sec)
0.1
160
120
10
80
40
8
6
4
2
0
0.001
Figure 18. Capacitance Characteristics.
0
0
C
Figure 20. Single Pulse Maximum
RSS
C
0.01
OSS
-V
Power Dissipation.
5
DS
1
, DRAIN TO SOURCE VOLTAGE (V)
C
SINGLE PULSE TIME (SEC)
ISS
0.1
10
P(pk)
Duty Cycle, D = t
T
1
R
R
J
10
- T
JA
JA
(t) = r(t) * R
A
= 415 °C/W
t
1
= P * R
t
2
15
SINGLE PULSE
FDG6332C_F085 Rev C2 (W)
R
JA
10
T
A
= 415
V
= 25
f = 1MHz
JA
GS
1
JA
(t)
/ t
= 0 V
o
o
2
C/W
C
100
100
20