FDG6332C_F085 Fairchild Semiconductor, FDG6332C_F085 Datasheet - Page 6

MOSFET N/P-CH 20V SC70-6

FDG6332C_F085

Manufacturer Part Number
FDG6332C_F085
Description
MOSFET N/P-CH 20V SC70-6
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDG6332C_F085

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 700mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
700mA, 600mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
113pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.3 Ohm @ 4.5 V @ Q1
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.7 A @ Q1 or 0.6 A @ Q2
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDG6332C_F085TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG6332C_F085FDG6332C-F085
0
Part Number:
FDG6332C_F085
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics: P-Channel
1.6
1.2
0.8
0.4
Figure 13. On-Resistance Variation with
1.5
0.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
2
0
Figure 11. On-Region Characteristics.
2
1
0
1
0.5
0
-50
Figure 15. Transfer Characteristics.
V
GS
V
-3.5V
V
DS
= -4.5V
I
GS
D
= -5V
= -0.6A
-25
= -4.5V
1
-V
-V
1
T
GS
0
DS
J
Temperature.
-3.0V
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
25
1.5
2
50
-2.5V
2
75
T
A
= -55
o
3
100
C)
o
C
2.5
-2.0V
125
125
o
25
C
o
C
4
150
3
Figure 16. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
1.8
1.6
1.4
1.2
0.8
1.2
0.8
0.6
0.4
0.2
0.1
Figure 12. On-Resistance Variation with
Figure 14. On-Resistance Variation with
10
1
1
with Source Current and Temperature.
1
1
0
0
V
Drain Current and Gate Voltage.
V
GS
GS
= 0V
= -2.5V
Gate-to-Source Voltage.
0.2
T
-V
A
SD
= 25
-V
0.5
, BODY DIODE FORWARD VOLTAGE (V)
2
GS
o
, GATE TO SOURCE VOLTAGE (V)
C
-I
T
0.4
D
A
, DRAIN CURRENT (A)
= 125
-3.0V
T
A
= 125
o
C
1
3
0.6
o
C
25
-3.5V
o
C
-55
0.8
o
C
-4.0V
1.5
4
FDG6332C_F085 Rev C2 (W)
I
D
1
= -0.3 A
-4.5V
2
1.2
5

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