FDG6335N Fairchild Semiconductor, FDG6335N Datasheet - Page 21

• Manufacturer Part Number: FDG6335N
• Description: MOSFET N-CH 20V 700MA SOT-363
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG6335N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 700mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 1.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 113pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 2.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.7 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q1609797

NC7WZU04P6X
NDS0605
NDS0610_NL
NDS7002A_NL
NC7WZU04P6X_F065
NDS0605_NL
NDS7002A
NDS7002A_SB9GGTXA
NC7WZU04P6X_F40
NDS0610
NDS7002A_D87Z
WY49_BWY005B
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