FDMJ1032C Fairchild Semiconductor, FDMJ1032C Datasheet - Page 8

• Manufacturer Part Number: FDMJ1032C
• Description: MOSFET N/P-CH DUAL 20V SC75
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMJ1032C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A, 2.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 270pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMJ1032CTR

©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
Typical Characteristics (Q2 P-Channel)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 21. Maximum Continuous Drain
5
4
3
2
1
0
Figure 19. Gate Charge Characteristics
1000
25
0
100
0.1
10
R
Current vs Ambient Temperature
10
1
I
θ
D
JA
-5
= -2.5A
V
= 89
GS
= -1.8V
50
o
T
C/W
A
, AMBIENT TEMPERATURE
1
V
Q
V
GS
V
g
GS
10
, GATE CHARGE(nC)
DD
= -4.5V
= -4.5V
75
-4
= -10V
2
V
Figure 23. Single Pulse Maximum Power Dissipation
DD
100
= -5V
V
10
DD
V
GS
-3
= -15V
= -2.5V
(
o
3
C
125
)
10
t, PULSE WIDTH (s)
-2
150
4
T
J
= 25°C unless otherwise noted
8
10
-1
0.01
600
100
0.1
10
20
10
1
0.1
0.1
Figure 20. Capacitance vs Drain
10
THIS AREA IS
LIMITED BY r
Figure 22. Forward Bias Safe
f = 1MHz
V
0
GS
= 0V
-V
-V
to Source Voltage
DS
DS
Operating Area
, DRAIN TO SOURCE VOLTAGE (V)
, DRAIN to SOURCE VOLTAGE (V)
SINGLE PULSE
T
R
T
DS(on)
J
A
θ
JA
= MAX RATED
10
= 25
= 182
1
1
o
C
1
o
C/W
SINGLE PULSE
T
A
= 25
10
o
C
2
C
C
C
iss
oss
rss
10
www.fairchildsemi.com
10
10
10ms
100ms
100
10
1ms
DC
1s
µ
s
3
µ
20
s
60