FDMJ1032C Fairchild Semiconductor, FDMJ1032C Datasheet - Page 9
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FDMJ1032C
Manufacturer Part Number
FDMJ1032C
Description
MOSFET N/P-CH DUAL 20V SC75
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMJ1032C.pdf
(11 pages)
Specifications of FDMJ1032C
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
90 mOhm @ 3.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.2A, 2.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
3nC @ 4.5V
Input Capacitance (ciss) @ Vds
270pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMJ1032CTR
©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
Typical Characteristics (Q2 P-Channel)
0.001
0.01
0.1
1
2
10
-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
10
-4
Figure 24. Transient Thermal Response Curve
10
-3
t, RECTANGULAR PULSE DURATION (s)
10
-2
T
J
= 25°C unless otherwise noted
9
10
-1
10
0
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
1
DM
x Z
P
θJA
DM
1
/t
x R
2
10
θJA
2
t
1
+ T
t
2
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A
10
3