FDS3912 Fairchild Semiconductor, FDS3912 Datasheet - Page 5

• Manufacturer Part Number: FDS3912
• Description: MOSFET N-CH DUAL 100V 3A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS3912

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 632pF @ 50V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.125 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
10
0.001
8
6
4
2
0
0.01
100
Figure 9. Maximum Safe Operating Area.
0.1
10
0
Figure 7. Gate Charge Characteristics.
1
0.01
0.001
0.01
0.1
SINGLE PULSE
R
I
D
0.0001
1
= 3A
JA
2
V
T
GS
A
= 135
= 25
R
= 10V
DS(ON)
0.1
o
o
C/W
C
4
V
D = 0.5
DS
LIMIT
, DRAIN-SOURCE VOLTAGE (V)
0.2
Q
g
0.1
, GATE CHARGE (nC)
6
0.05
SINGLE PULSE
0.02
0.001
1
0.01
8
DC
Figure 11. Transient Thermal Response Curve.
1s
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
10
10s
10
10ms
V
1ms
DS
100µs
= 40V
0.01
12
100
80V
14
60V
1000
16
0.1
800
700
600
500
400
300
200
100
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
RSS
Figure 10. Single Pulse Maximum
1
0.01
20
V
Power Dissipation.
DS
C
, DRAIN TO SOURCE VOLTAGE (V)
OSS
0.1
40
t
10
1
, TIME (sec)
C
ISS
1
60
P(pk)
Duty Cycle, D = t
T
R
R
J
JA
- T
100
JA
SINGLE PULSE
R
(t) = r(t) + R
A
t
= 135 °C/W
JA
1
T
10
= P * R
t
A
80
2
= 135°C/W
FDS3912 Rev C2(W)
= 25°C
V
f = 1MHz
GS
JA
= 0 V
1
JA
(t)
/ t
100
2
100
1000