FDS8934A Fairchild Semiconductor, FDS8934A Datasheet

FDS8934A

Manufacturer Part Number

FDS8934A

Description

MOSFET P-CH DUAL 20V 4A 8SOIC

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDS8934A.pdf (5 pages)

Specifications of FDS8934A

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

55 mOhm @ 4A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

28nC @ 5V

Input Capacitance (ciss) @ Vds

1130pF @ 10V

Power - Max

900mW

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Configuration

Dual Dual Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.055 Ohms

Forward Transconductance Gfs (max / Min)

13 S

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

- 8 V

Continuous Drain Current

4 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Symbol

THERMAL CHARACTERISTICS

FDS8934A

Dual P-Channel Enhancement Mode Field Effect Transistor

Absolute Maximum Ratings

General Description

DSS

GSS

SO-8 P-Channel enhancement mode power field effect

transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance

and provide superior switching performance. These devices

are particularly suited for low voltage applications such as

notebook computer power management and other battery

powered circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

STG

SOT-23

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

SO-8

- Pulsed

SuperSOT

pin 1

-6

= 25

C unless otherwise noted

SuperSOT

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

(Note 1a)

-8

Features

SO-8

-4 A , -20 V, R

High density cell design for extremely low R

High power and current handling capability in a widely

used surface mount package.

Dual MOSFET in surface mount package.

FDS8934A

-55 to 150

DS(ON)

-20

1.6

0.9

- 4

-8

SOT-223

= 0.055

= 0.072

@ V

= -4.5 V,

= -2.5 V.

SOIC-16

May 1998

DS(ON)

FDS8934A Rev.B

Units

°C/W

°C

Related parts for FDS8934A

FDS8934A Summary of contents

Page 1

... Dual MOSFET in surface mount package. TM SO-8 SuperSOT - unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) May 1998 = 0.055 @ V = -4.5 V, DS(ON 0.072 @ V = -2.5 V. DS(ON DS(ON) SOIC-16 SOT-223 FDS8934A - -20 2 1.6 1 0.9 -55 to 150 78 40 FDS8934A Rev.B Units °C °C/W °C/W ...

Page 2

... Max - -100 -100 -0.4 -0 0.043 0.055 T =125°C 0.062 0.077 J 0.059 0.072 -20 13 1130 480 120 260 360 90 125 20 28 2.8 3.2 -1.3 -0.7 -1.2 (Note 2) is guaranteed 135 C 0.003 in 2 pad of 2oz copper. Units V o mV/ C µ mV FDS8934A Rev.B ...

Page 3

... I , DRAIN CURRENT (A) D Drain Current and Gate Voltage - 125°C A 25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage =125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature 1.2 FDS8934A Rev.B ...

Page 4

... Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec 0.2 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135°C 25°C A 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( 135°C/W JA P(pk ( Duty Cycle 100 C iss C oss C rss 10 20 100 300 300 FDS8934A Rev.B ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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