AO7800 Alpha & Omega Semiconductor Inc, AO7800 Datasheet

MOSFET DUAL N-CH 20V .9A SC70-6

AO7800

Manufacturer Part Number
AO7800
Description
MOSFET DUAL N-CH 20V .9A SC70-6
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO7800

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
300 mOhm @ 900mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
900mA
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
1.9nC @ 4.5V
Input Capacitance (ciss) @ Vds
120pF @ 10V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1094-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO7800
Manufacturer:
FSC
Quantity:
3 000
Part Number:
AO7800
Manufacturer:
AOS/万代
Quantity:
20 000
Company:
Part Number:
AO7800
Quantity:
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Alpha Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO7800 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.It
is ESD protected. Standard Product AO7800 is Pb-
free (meets ROHS & Sony 259 specifications).
AO7800L is a Green Product ordering option.
AO7800 and AO7800L are electrically identical.
AO7800
Dual N-Channel Enhancement Mode Field Effect Transistor
A
A
DS(ON)
S1
G1
D2
B
T
T
T
T
(SOT-323)
Top View
A
A
A
A
SC-70-6
=25°C
=70°C
=25°C
=70°C
, low gate charge and
1
2
3
C
6
5
4
A
A
A
D1
G2
S2
=25°C unless otherwise noted
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
G1
Features
V
I
R
R
R
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
θJA
θJL
= 0.9 A (V
(V) = 20V
< 300mΩ (V
< 350mΩ (V
< 450mΩ (V
D1
S1
Maximum
-55 to 150
0.19
Typ
360
400
300
GS
0.9
0.7
0.3
20
±8
5
= 4.5V)
G2
GS
GS
GS
= 4.5V)
= 2.5V)
= 1.8V)
Max
415
460
350
D2
S2
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO7800 Summary of contents

Page 1

... SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters.It is ESD protected. Standard Product AO7800 is Pb- free (meets ROHS & Sony 259 specifications). AO7800L is a Green Product ordering option. AO7800 and AO7800L are electrically identical. ...

Page 2

... AO7800 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO7800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10V (Volts) DS Fig 1: On-Region Characteristics 480 440 V =1.8V GS 400 360 320 V =2.5V GS 280 240 200 160 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 500 460 420 380 340 300 260 220 180 140 (Volts) GS Figure 5: On-Resistance vs ...

Page 4

... AO7800 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =10V =0. 0.0 0.2 0.4 0.6 0.8 1.0 Q (nC) g Figure 7: Gate-Charge Characteristics 10.0 T =150°C, T =25°C J(Max DS(ON) 10ms limited 1.0 0.1s 1s 0.1 10s DC 0.0 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ...

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