BSO303P H Infineon Technologies, BSO303P H Datasheet - Page 2

• Manufacturer Part Number: BSO303P H
• Description: MOSFET 2P-CH 30V 7A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2678pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 21.0 mOhm
• Rds (on) (max) (@4.5v): 32.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.3
1)
connection. PCB is vertical without blown air; t≤10 sec.
2.)
Parameter
Thermal characteristics
Thermal resistance,
junction - soldering point
SMD version, device on PCB:
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
See figure3 for more detailed information
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJS
thJA
DS(on)
minimal footprint, t<
10s
minimal footprint,
steady state
6 cm
t<10s
6 cm
steady state
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=-6.6 A
DS
=V
=-30 V, V
=-30 V, V
=0 V, I
=-20 V, V
=-4.5 V, I
=-10 V, I
|>2|I
2
2
cooling area
cooling area
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=-250µA
=-100 µA
D
DS(on)max
D
GS
GS
DS
=-8.2 A
=-6.6 A
=0 V,
=0 V,
=0 V
1)
1),
,
min.
-30
11
-1
-
-
-
-
-
-
-
-
Values
typ.
-1.5
-0.1
-10
25
17
27
-
-
-
-
-
max.
-100
-100
62.5
BSO303P H
110
150
50
80
32
21
-2
-1
-
-
Unit
K/W
V
µA
nA
mW
S
2010-02-10