BSO303P H Infineon Technologies, BSO303P H Datasheet - Page 5
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BSO303P H
Manufacturer Part Number
BSO303P H
Description
MOSFET 2P-CH 30V 7A DSO-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.BSO303P_H.pdf
(9 pages)
Specifications of BSO303P H
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 8.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
2V @ 100µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
2678pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Package
SO-8
Vds (max)
-30.0 V
Rds (on) (max) (@10v)
21.0 mOhm
Rds (on) (max) (@4.5v)
32.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev. 1.3
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
60
50
40
30
20
10
30
20
10
DS
GS
0
0
); T
0
0
); |V
-10 V
-5 V
j
-6 V
=25 °C
j
GS
DS
-4.5 V
|>2|I
2
1
D
|R
DS(on)max
150 °C
4
-V
-V
2
DS
GS
-2.5 V
[V]
[V]
-3.5 V
-3.0 V
25 °C
-4.0 V
6
3
8
4
page 5
10
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
70
60
50
40
30
20
10
40
30
20
10
D
=f(I
0
0
); T
0
0
D
j
); T
=25 °C
GS
-3 V
j
=25 °C
10
10
-3.5 V
-I
-I
D
D
20
-5 V
[A]
[A]
-4 V
20
-4.5 V
-6 V
-8 V
30
BSO303P H
-10 V
30
2010-02-10
40