BSO303P H Infineon Technologies, BSO303P H Datasheet - Page 5

• Manufacturer Part Number: BSO303P H
• Description: MOSFET 2P-CH 30V 7A DSO-8
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303P H

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2678pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Package: SO-8
• Vds (max): -30.0 V
• Rds (on) (max) (@10v): 21.0 mOhm
• Rds (on) (max) (@4.5v): 32.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.3
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
60
50
40
30
20
10
30
20
10
DS
GS
0
0
); T
0
0
); |V
-10 V
-5 V
j
-6 V
=25 °C
j
GS
DS
-4.5 V
|>2|I
2
1
D
|R
DS(on)max
150 °C
4
-V
-V
2
DS
GS
-2.5 V
[V]
[V]
-3.5 V
-3.0 V
25 °C
-4.0 V
6
3
8
4
page 5
10
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
70
60
50
40
30
20
10
40
30
20
10
D
=f(I
0
0
); T
0
0
D
j
); T
=25 °C
GS
-3 V
j
=25 °C
10
10
-3.5 V
-I
-I
D
D
20
-5 V
[A]
[A]
-4 V
20
-4.5 V
-6 V
-8 V
30
BSO303P H
-10 V
30
2010-02-10
40