NDS9955 Fairchild Semiconductor, NDS9955 Datasheet

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NDS9955

Manufacturer Part Number
NDS9955
Description
MOSFET 2N-CH 50V 3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS9955

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
345pF @ 25V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NDS9955TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDS9955
Manufacturer:
NS
Quantity:
1 620
Part Number:
NDS9955
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
© 1998 Fairchild Semiconductor Corporation
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
NDS9955
Dual N-Channel Enhancement Mode Field Effect Transistor
Absolute Maximum Ratings
General Description
DSS
GSS
D
J
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These
devices are particularly suited for low voltage applications
such as disk drive motor control, battery powered circuits
where fast switching, low in-line power loss, and resistance
to transients are needed.
,T
JA
JC
STG
SOT-23
D1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
SO-8
D1
D2
D2
- Pulsed
SuperSOT
pin 1
S1
TM
-6
G1
T
A
= 25
S2
o
C unless other wise noted
G2
SuperSOT
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1a)
(Note 1)
(Note 1a)
TM
-8
Features
3.0 A, 50 V. R
High density cell design for extremely low R
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SO-8
6
5
7
8
R
-55 to 150
NDS9955
DS(ON)
DS(ON)
±20
1.6
0.9
50
10
78
40
3
2
1
= 0.130
= 0.200
SOT-223
@ V
@ V
GS
1
4
3
2
GS
= 10 V,
= 4.5 V.
May 1998
SOIC-16
DS(ON)
.
NDS9955 Rev.A
Units
°C/W
°C/W
°C
W
V
V
A

Related parts for NDS9955

NDS9955 Summary of contents

Page 1

... Dual MOSFET in surface mount package. TM SO-8 SuperSOT - unless other wise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) = 0.130 @ DS(ON 0.200 @ V = 4.5 V. DS(ON) GS SOT-223 NDS9955 50 ± 1.6 1 0.9 -55 to 150 78 40 May 1998 . DS(ON) SOIC-16 Units °C °C/W °C/W NDS9955 Rev.A ...

Page 2

... T =125°C 0.7 2.2 J 0.076 0.13 T =125°C 0.124 0.2 J 0.103 0.2 T =125°C 0.166 0 5.3 345 110 7 12.9 30 1.7 3.2 1.3 0.8 1.2 (Note 135 C 0.003 in C 0.02 in pad of 2oz copper. Units µ guaranteed NDS9955 Rev.A ...

Page 3

... V 5.0V 6.0V 10V DRAIN CURRENT (A) D Drain Current and Gate Voltage =125° =25° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature 1.2 NDS9955 Rev.A ...

Page 4

... Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec iss C oss C rss = 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135°C 25°C A 0.01 0 100 SINGLE PULSE TIME (SEC) Dissipation. R ( 135 °C/W JA P(pk ( Duty Cycle 100 300 Transient 50 300 NDS9955 Rev.A ...

Page 5

SO-8 Tape and Reel Data and Package Dimensions SOIC(8lds) Packaging Configuration: Figure 1 SHI P OR STO RE N EAR ECT ROST ECT RO M AGN ETI ...

Page 6

... Dim A max 13" Diameter Option Reel Tape Size Dim A Dim B Option 7.00 0.059 12mm 7" Dia 177.8 1.5 13.00 0.059 12mm 13" Dia 330 1.5 1998 Fairchild Semiconductor Corporation User Direction of Feed Dimensions are in millimeter 1.55 1.60 1.75 10.25 5.50 8.0 +/-0 ...

Page 7

SO-8 Tape and Reel Data and Package Dimensions, continued SOIC-8 (FS PKG Code S1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 September 1998, Rev. ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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