NDS9955 Fairchild Semiconductor, NDS9955 Datasheet - Page 2

• Manufacturer Part Number: NDS9955
• Description: MOSFET 2N-CH 50V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9955

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 345pF @ 25V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NDS9955TR

Electrical Characteristics (
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CH ARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
t
I
DSS
GSSF
GSSR
D(ON)
D(on)
r
D(off)
f
S
rr
rr
Notes:
1. R
FS
BV
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
design while R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
DSS
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
/ T
J
CA
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
is determined by the user's board design.
(Note 2)
T
A
Scale 1 : 1 on letter size paper
a. 78
= 25
(Note 2)
pad of 2oz copper.
O
C/W on a 0.5 in
O
C unless otherwise noted )
2
Conditions
V
I
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
dI
D
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DS
GS
DS
GS
GS
GS
= 250 µA, Referenced to 25
F
/dt = 100 A/µs
= 25 V, I
= 40 V, V
= V
= 10 V, I
= 25 V, V
= 25 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V, I
= 4.5 V, I
= 10 V, V
= 10 V , R
= 10 V
= 0 V, I
= 0 V, I
GS
, I
D
F
D
S
= 1.3 A,
= 250 µA
D
DS
= 250 µA
D
D
D
= 1.3 A
GS
DS
GS
DS
D
= 1 A
= 3 A
GEN
= 3 A
= 2 A,
b. 125
= 0 V
= 1.5 A
= 0 V
= 0 V
= 10 V
= 0 V,
pad of 2oz copper.
= 6
O
C/W on a 0.02 in
(Note 2)
T
T
T
J
J
J
o
=125°C
=125°C
=125°C
C
2
Min
0.7
50
10
1
0.076
0.124
0.103
0.166
Typ
12.9
345
110
1.7
5.3
7.5
1.7
3.2
0.8
1.5
60
25
20
40
5
7
c. 135
pad of 2oz copper.
O
C/W on a 0.003 in
Max
-100
0.13
100
2.2
0.2
0.2
0.3
1.3
1.2
20
20
70
30
2
3
5
JC
is guaranteed by
NDS9955 Rev.A
mV/
Units
µA
nC
nA
nA
ns
ns
V
V
A
S
A
V
A
pF
pF
pF
2
o
C