FDG6302P Fairchild Semiconductor, FDG6302P Datasheet - Page 3

• Manufacturer Part Number: FDG6302P
• Description: MOSFET P-CH DUAL 25V SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6302P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 140mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 140mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.31nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 12pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical Characteristics
0.15
0.05
0.14
0.12
0.08
0.06
0.04
0.02
1.6
1.4
1.2
0.8
0.6
0.2
0.1
0.1
1
0
Figure 1. On-Region Characteristics.
0
Figure 5. Transfer Characteristics.
-50
Figure 3. On-Resistance Variation
0
0
V
DS
V
I = -0.14A
D
GS
-25
= -5.0V
= -4.5V
V
-V
GS
-V
with Temperature.
T , JUNCTION TEMPERATURE (°C)
GS
1
0
1
J
DS
= -4.5V
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
25
-3.5V
T = -55°C
A
50
2
2
-3.0V
-2.7V
75
25°C
-2.5V
125°C
100
3
3
-2.0V
125
4
150
4
25
20
15
10
2.5
1.5
0.5
5
0
1.5
0.0001
2
1
0.001
Figure 6. Body Diode Forward Voltage
0
0.01
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.3
0.1
0.2
V
GS
V
GS
2
= -2.0V
= 0V
-V
-V
GS
0.05
Variation with Source Current
and Temperature.
SD
0.4
2.5
Drain Current and Gate Voltage.
Gate-to-Source Voltage.
, GATE TO SOURCE VOLTAGE (V)
, BODY DIODE FORWARD VOLTAGE (V)
-I , DRAIN CURRENT (A)
D
-2.5V
3
0.6
T = 125°C
A
-2.7V
0.1
3.5
25°C
-3.0V
0.8
-55°C
T = 125°C
A
T = 25°C
4
A
-3.5V
0.15
I = -0.07A
D
1
-4.0V
4.5
FDG6302P Rev.F
-4.5V
1.2
5
0.2