FDR8508P Fairchild Semiconductor, FDR8508P Datasheet - Page 201

• Manufacturer Part Number: FDR8508P
• Description: MOSFET P-CH 30V 3A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR8508P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete
MOSFET: QFET
F Q P 18 N 50 __ V2
(Continued)
®
C: Advanced QFET C-series
Empty: Previous Version of QFET
V2: Advanced QFET V2-series
Empty: Standard Product
L: Logic Level Product
F: Fast Recovery MOSFET
N: N-Channel
P: P-Channel
A: TO-3P
B: D
D: D-PAK
E: TO-126
H: TO-247
N: TO-92
P: TO-220
S: 8-SOP
Q: QFET Technology
C: SuperFET Technology
Series
Optional
Voltage Rating (x 10)
Channel Polarity
Current Rating
Package
Base Technology
Fairchild
2
-PAK
AF: TO-3PF
I: I
U: I-PAK
G: 8DIP
L: TO-264
NL: TO-92L
PF: TO-220F
T: SOT-223
2
8-8
-PAK
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