FDR8508P Fairchild Semiconductor, FDR8508P Datasheet - Page 26

• Manufacturer Part Number: FDR8508P
• Description: MOSFET P-CH 30V 3A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR8508P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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SOT-223
FDT439N
NDT453N
NDT451AN
FDT459N
FDT457N
HUF75309T3ST
HUFA75309T3ST
HUF75307T3ST
HUFA75307T3ST
NDT3055
NDT3055L
FQT13N06L
FQT13N06
IRLM120A
IRLM110A
FDT3612
IRFM120A
FQT7N10
FQT7N10L
IRFM110A
FDT461N
IRLM220A
IRLM210A
IRFM220B
FQT4N20L
FQT4N20
IRFM210B
FQT4N25
IRFM214B
SSM1N45B
FQT2P25
SFM9214
FQT3P20
SFM9210
FQT5P10
SFM9110
NDT2955
SOT-223 N-Channel
SOT-223 P-Channel
Products
Min. (V)
BV
-250
-250
-200
-200
-100
-100
100
100
100
100
100
100
100
100
200
200
200
200
200
200
250
250
450
-60
30
30
30
30
30
55
55
55
55
60
60
60
60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.028
0.035
0.035
10V
0.06
0.07
0.07
0.09
0.09
0.11
0.14
0.12
0.35
0.35
1.35
1.75
4.25
1.05
0.1
0.1
0.2
0.4
0.8
1.4
1.5
2.7
1.2
0.3
–
–
–
–
–
2
2
4
4
3
R
DS(ON)
0.14@5V
0.22@5V
0.44@5V
0.13@6V
0.38@5V
0.8@5V
1.5@5V
1.4@5V
0.045
0.042
0.055
4.5V
0.05
0.09
0.12
2.5
0.5
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-21
0.058
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
1.8V
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
10.7
10.7
10.7
10.2
2.36
10.3
GS
4.2
8.3
4.8
5.8
5.5
5.8
4.6
8.5
6.1
7.2
4.3
8.1
6.5
6.5
6.3
28
19
12
14
13
14
16
12
11
9
4
5
9
6
9
9
= 5V
I
D
1.13
0.77
0.85
0.85
0.77
0.83
0.64
0.55
0.45
0.67
6.3
7.2
6.5
2.6
2.6
2.8
2.8
2.3
1.5
3.7
2.3
1.7
1.7
1.5
0.4
1.1
0.5
0.5
2.5
8
5
3
3
4
4
1
1
(A)
MOSFETs
P
D
1.13
1.1
1.1
1.1
1.1
2.1
2.1
2.7
2.2
2.4
1.8
2.4
2.2
2.2
2.5
2.1
0.9
2.5
1.6
2.5
1.6
2.5
3
3
3
3
3
3
3
3
2
2
2
2
2
2
3
(W)