FDC6432SH Fairchild Semiconductor, FDC6432SH Datasheet
FDC6432SH
Specifications of FDC6432SH
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FDC6432SH Summary of contents
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... V DS(ON mΩ –4.5 V DS(ON 125 mΩ –2.5 V DS(ON 220 mΩ –1.8 V DS(ON) GS Q2( Q1(N) Ratings Units Q1 (N) Q2 (P) 30 –12 ±16 ±8 2.4 –2.5 7 –7 1.3 W 0.7 °C –55 to +150 °C/W 100 175 60 Tape width Quantity 8mm 3000 units FDC6432SH Rev B ( ...
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... Max Units – mV/°C Q2 –10 Q1 500 µ ±100 nA Q2 ±100 –0.4 –0.7 –1.5 Q1 –7 mV/° 105 mΩ 100 140 125 Q2 mΩ 154 220 86 120 Ω 270 pF Q2 514 234 167 1.2 2 2 1 1.7 FDC6432SH Rev B (W) ...
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... IF = 2.4A, dIF/dt = 300A/µs For Q2 –2.5A, dIF/dt = 100A/µs is determined by the user's board design. θCA 100°C/W when 2 mounted on a 1in pad copper Q Min Typ Max Units Q1 0.6 700 mV Q2 –0.7 1200 0 –0 175°C/W when mounted on a minimum pad copper FDC6432SH Rev B (W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.0V 3.5V 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.3 0.4 0.5 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6432SH Rev B ( 0.7 ...
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... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 175°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 175 C/W θJA P(pk (t) θ Duty Cycle 100 FDC6432SH Rev B (W) 30 1000 1000 ...
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... Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. -2.0V -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6432SH Rev B ( 1.2 ...
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... Figure 21. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 175°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 175 C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDC6432SH Rev B (W) 12 ...
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CROSSVOLT â â â â â Rev. I2 ...