This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... IF = 2.4A, dIF/dt = 300A/µs For Q2 –2.5A, dIF/dt = 100A/µs is determined by the user's board design. θCA 100°C/W when 2 mounted on a 1in pad copper Q Min Typ Max Units Q1 0.6 700 mV Q2 –0.7 1200 0 –0 175°C/W when mounted on a minimum pad copper FDC6432SH Rev B (W) ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 3.0V 3.5V 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.3 0.4 0.5 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6432SH Rev B ( 0.7 ...
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 175°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 175 C/W θJA P(pk (t) θ Duty Cycle 100 FDC6432SH Rev B (W) 30 1000 1000 ...
... Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. -2.0V -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6432SH Rev B ( 1.2 ...
... Figure 21. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 175°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 175 C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDC6432SH Rev B (W) 12 ...