FDC6432SH Fairchild Semiconductor, FDC6432SH Datasheet - Page 7

• Manufacturer Part Number: FDC6432SH
• Description: MOSFET/SYNCFET N/PCH SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6432SH

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 30V, 12V
• Current - Continuous Drain (id) @ 25° C: 2.4A, 2.5A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 3.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 270pF @ 15V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics : Q2
0.01
5
4
3
2
1
0
Figure 20. Maximum Safe Operating Area.
0.1
10
0
Figure 18. Gate Charge Characteristics.
1
0.01
0.1
0.1
R
0.0001
1
SINGLE PULSE
I
DS(ON)
R
D
θJA
V
= -2.5A
T
GS
1
A
= 175
LIMIT
= 25
= -4.5V
D = 0.5
0.2
0.1
0.05
o
o
C
0.02
C/W
0.01
-V
2
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
SINGLE PULSE
DC
g
1
, GATE CHARGE (nC)
0.001
10s
3
1s
100ms
10ms
Figure 22. Transient Thermal Response Curve.
V
4
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
1ms
= -4V
10
100 µ s
0.01
5
-8V
6
-6V
100
7
0.1
t
1
, TIME (sec)
800
700
600
500
400
300
200
100
10
8
6
4
2
0
0
0.01
Figure 19. Capacitance Characteristics.
0
1
Figure 21. Single Pulse Maximum
0.1
-V
Power Dissipation.
DS
3
, DRAIN TO SOURCE VOLTAGE (V)
C
C
C
10
ISS
OSS
RSS
1
t
1
, TIME (sec)
6
P(pk)
Duty Cycle, D = t
T
R
10
J
R
θJA
- T
θJA
(t) = r(t) * R
A
100
= 175
t
1
= P * R
t
2
SINGLE PULSE
R
9
θJA
o
T
100
C/W
FDC6432SH Rev B (W)
A
= 175°C/W
θJA
f = 1 MHz
V
= 25°C
θJA
1
GS
(t)
/ t
= 0 V
2
1000
1000
12