USB10H Fairchild Semiconductor, USB10H Datasheet - Page 123
USB10H
Manufacturer Part Number
USB10H
Description
MOSFET P-CH DUAL 20V SSOT6
Manufacturer
Fairchild Semiconductor
Datasheet
1.USB10H.pdf
(214 pages)
Specifications of USB10H
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
170 mOhm @ 1.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
4.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
441pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
USB10H
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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JFETs (Continued)
BSR56
SOT-23 P-Channel
MMBFJ270
MMBFJ177
MMBFJ176
MMBFJ271
MMBFJ175
MMBF5460
MMBF5461
MMBF5462
SOT-323 N-Channel
FJX597JH
SOT-623F N-Channel
FJZ594J
SuperSOT N-Channel
MMBF5434
MMBFJ108
TO-92 N-Channel
FJN598J
J300
2N5555
2N5484
J210
2N5485
J110
J309
PN5434
J211
J107
2N5457
2N5486
J212
J109
J106
J310
Products
BV
(V)
40
30
30
30
30
30
40
40
40
20
20
25
25
20
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
GDS
Dissipation
Power
(mW)
250
225
225
225
225
225
225
225
225
100
100
350
350
150
350
350
350
350
350
625
625
350
350
625
625
350
350
625
625
625
P
D
Min (V)
0.75
0.5
0.8
1.5
1.8
0.3
0.5
0.5
2.5
0.5
0.5
–
–
1
–
–
–
1
4
2
4
1
3
1
3
1
1
2
2
2
Typ (V) Max (V) @ I
0.6
0.6
0.6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
GS
2.5
4.5
7.5
1.5
1.5
1.5
4.5
4.5
6.5
10
10
–
–
2
4
6
6
9
4
3
3
4
4
4
4
6
6
6
6
6
(off)
0.001
0.001
0.001
0.003
0.001
0.003
0.001
0.001
0.001
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
D
–
–
–
1
1
1
1
1
1
1
1
(µA) @ V
2-118
Discrete Power Products –
15
15
15
15
15
15
15
15
15
15
15
15
15
10
15
15
15
15
15
10
DS
–
–
–
5
5
5
5
5
5
5
(V) Min (mA) Max (mA) @V
0.15
0.15
100
200
1.5
0.1
50
30
80
15
10
12
30
15
40
24
2
2
6
7
1
2
4
6
1
2
4
7
1
8
0.35
0.35
0.35
I
15
20
25
50
60
16
30
15
10
30
20
20
40
60
DSS
–
–
–
–
–
–
–
–
–
5
9
5
5
DS
15
15
15
15
15
15
15
15
15
15
15
10
15
15
15
15
15
10
15
15
15
15
15
15
15
15
10
5
5
5
(V) Min (mS) Max (mS)
Bipolar Transistors and JFETs
6000
8000
1.5
3.5
10
–
–
–
–
1
2
–
–
–
–
–
–
–
3
4
–
–
6
–
1
4
7
–
–
8
GFS
15000
18000
12
20
12
12
18
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
4
5
6
6
7
5
8
300
150
R
(Ω)
250
125
25
18
10
12
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
8
8
6
DS
I
0.0002
0.003
0.003
D
(µA)
0.01
(off)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
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