USB10H Fairchild Semiconductor, USB10H Datasheet - Page 18
![MOSFET P-CH DUAL 20V SSOT6](/photos/5/42/54216/261-supersot-6_sml.jpg)
USB10H
Manufacturer Part Number
USB10H
Description
MOSFET P-CH DUAL 20V SSOT6
Manufacturer
Fairchild Semiconductor
Datasheet
1.USB10H.pdf
(214 pages)
Specifications of USB10H
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
170 mOhm @ 1.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
4.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
441pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
USB10H
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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- Download datasheet (4Mb)
www.fairchildsemi.com
SuperSOT™-8
FDR8305N
FDR6580
NDH831N
FDR6674A
FDR4420A
FDR6678A
NDH8321C
FDR8702H
NDH8521C
FDR8508P
NDH8502P
FDR858P
FDR856P
FDR8308P
NDH8304P
NDH8302P
FDR844P
FDR840P
FDR838P
FDR836P
NDH834P
NDH832P
FDR842P
SuperSOT-8 N-Channel
SuperSOT-8 Complementary N- and P-Channel
SuperSOT-8 P-Channel
Products
Min. (V)
20 | -20
20 | -20
30 | -30
BV
-30
-30
-30
-30
-20
-20
-20
-20
-20
-20
-20
-20
-20
-12
20
20
20
30
30
30
DSS
Complementary
Complementary
Complementary
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
0.0085
0.009
0.019
10V
0.02
0.05
–
–
–
–
–
–
–
–
–
–
R
0.038 | 0.08
DS(ON)
0.0095
0.022
0.009
0.013
0.024
0.075
0.028
0.011
0.011
0.017
0.009
4.5V
0.05
0.07
0.06
Max (Ω) @ V
2-13
0.095@2.7V
0.054 | 0.11
0.08@2.7V
0.028
0.014
0.024
0.012
2.5V
0.011
0.016
0.07
–
–
–
–
–
GS
=
Replaced by NDH8304P
Replaced by FDC637AN
Replaced by FDS8928A
Replaced by FDS8958A
Replaced by FDN360P
Replaced by FDR858P
Replaced by FDR838P
Replaced by FDR838P
Bold = New Products (introduced January 2003 or later)
1.8V
0.016
0.02
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
16.2
7 | 6
34
33
23
13
21
13
16
53
41
30
18
57
8
= 5V
3.6 | 2.6
I
D
11.2
11.5
4.5
2.7
7.5
3.2
4.2
11
10
10
11
3
8
8
(A)
MOSFETs
P
D
0.8
1.8
0.8
0.8
1.8
1.8
1.8
1.8
1.8
1.8
0.8
1.8
0.8
1.8
1.8
(W)
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