NDS0610 Fairchild Semiconductor, NDS0610 Datasheet - Page 3

• Manufacturer Part Number: NDS0610
• Description: MOSFET P-CH 60V 120MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of NDS0610

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120mA
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Gate Charge (qg) @ Vgs: 2.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 79pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.12 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS0610TR

Qualification Stress Test and Sample Size Detail
Device #1 2N7002
Package:
006
#Leads:
Precondition Description:
Pg. 3