FDY102PZ Fairchild Semiconductor, FDY102PZ Datasheet - Page 6

• Manufacturer Part Number: FDY102PZ
• Description: MOSFET P-CH 20V 830MA SC89-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDY102PZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 830mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 135pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.5 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.83 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDY102PZTR

©2010 Fairchild Semiconductor Corporation
FDY102PZ Rev.B2
Dimensional Outline and Pad Layout
(0.15)
0.98
0.78
0.43
0.28
1
3
1.70
1.50
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
2
1.00
SC89 PACKAGING STANDARD.
MOLD FLASH, AND TIE BAR EXTRUSIONS.
0.50
0.35
0.25
1.70
1.50
0.54
0.34
0.78
0.58
6
SEE DETAIL A
0.10
0.00
1.14
0.50
LAND PATTERN RECOMMENDATION
0.50
SCALE 2 : 1
DETAIL A
0.66
0.50
0.20
0.04
1.80
www.fairchildsemi.com