FDY100PZ Fairchild Semiconductor, FDY100PZ Datasheet - Page 3
![MOSFET P-CH 20V 350MA SC-89](/photos/5/45/54559/fdy100pz_sml.jpg)
FDY100PZ
Manufacturer Part Number
FDY100PZ
Description
MOSFET P-CH 20V 350MA SC-89
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDY100PZ.pdf
(6 pages)
Specifications of FDY100PZ
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.2 Ohm @ 350mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
350mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
100pF @ 10V
Power - Max
446mW
Mounting Type
Surface Mount
Package / Case
SC-89-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
1.2 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.35 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
350mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDY100PZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDY100PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDY100PZ-NL
Manufacturer:
ON/安森美
Quantity:
20 000
Typical Characteristics
FDY100PZ Rev A
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
1
0
1
0
1.6
1.4
1.2
0.8
0.6
0.5
0
Figure 3. On-Resistance Variation with
1
Figure 1. On-Region Characteristics.
-50
V
GS
Figure 5. Transfer Characteristics.
V
= -4.5V
-4.0V
V
DS
I
D
GS
= -0.35A
= -5V
-25
= -4.5V
-V
-V
0.5
DS
1
GS
T
, DRAIN TO SOURCE VOLTAGE (V)
0
J
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
-3.0V
T
25
A
= 125
V
-2.5V
1.5
o
1
C
50
25
o
-2.0V
C
75
-55
o
C
1.5
100
o
2
C)
-1.8V
125
150
2.5
2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
1.75
1.25
0.75
0.25
0.01
1.5
0.5
2.6
2.2
1.8
1.4
0.6
0.1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
2
1
with Source Current and Temperature.
1
1
0
0
0
Drain Current and Gate Voltage.
V
V
GS
GS
T
-2.0V
=-1.8V
T
A
= 0V
A
= 25
0.2
Gate-to-Source Voltage.
= 125
-V
-2.5V
0.2
o
2
SD
C
-V
, BODY DIODE FORWARD VOLTAGE (V)
o
GS
C
, GATE TO SOURCE VOLTAGE (V)
0.4
-I
D
T
25
-3.0V
, DRAIN CURRENT (A)
A
= 125
o
0.4
C
4
0.6
o
C
-55
-3.5V
o
C
0.8
0.6
6
-4.0V
www.fairchildsemi.com
1
0.8
8
I
D
= -0.175A
1.2
-4.5V
10
1.4
1