FDC638APZ Fairchild Semiconductor, FDC638APZ Datasheet - Page 4

• Manufacturer Part Number: FDC638APZ
• Description: MOSFET P-CH 20V 4.5A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC638APZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 43 mOhm @ 4.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1000pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.043 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 18 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC638APZTR

FDC638APZ Rev.B
Typical Characteristics
Figure 11. Single Pulse Maximum Power Di
Figure 9.
1E-3
1E-4
1E-5
0.01
0.1
Figure 7.
50
40
30
20
10
0
5
4
3
2
1
0
1
10
0
0
-3
V
I
GS
D
T
= -4.5A
Gate Leakage Current vs Gate to
= 0V
J
-V
= 150
2
GS
10
Gate Charge Characteristics
-2
, GATE TO SOURCE VOLTAGE(V)
Source Voltage
o
5
C
Q
g
t, PULSE WIDTH (s)
, GATE CHARGE(nC)
4
10
V
SINGLE PULSE
DD
-1
= -5V
10
6
T
J
10
= 25°C unless otherwise noted
V
T
0
DD
J
8
= 25
SINGLE PULSE
R
T
= -15V
A
V
θ
15
JA
o
=25
DD
C
10
= 156
= -10V
o
10
C
1
ssipation
o
C/W
10
20
12
2
4
Figure 12. Transient Thermal Response Curve
0.001
2000
1000
0.01
0.01
100
100
0.1
0.1
10
70
0.1
1
1
10
0.1
-4
Figure 8.
DUTY CYCLE-DESCENDING ORDER
D = 0.5
SINGLE PULSE
r
Figure 10.
f = 1MHz
V
DS(on)
GS
0.2
0.1
0.05
0.02
0.01
t, RECTANGULAR PULSE DURATION (s)
-V
-V DS , DRAIN to SOURCE VOLTAGE (V)
10
= 0V
LIMIT
DS
-3
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
Operating Area
Capacitance vs Drain
NOTES:
DUTY FACTOR: D = t
PEAK T
10
Forward Bias Safe
-2
1
1
SINGLE PULSE
T J = MAX RATED
T A = 25
J
= P
10
DM
-1
O
C
x Z
P
θJA
DM
1
10
/t
x R
C
2
C
C
0
rss
oss
iss
θJA
10
t
1
www.fairchildsemi.com
+ T
t
2
10
A
10
1
100ms
10us
100us
1ms
10ms
1s
DC
20
50
10
2