FDC638 Fairchild Semiconductor, FDC638 Datasheet

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FDC638

Manufacturer Part Number
FDC638
Description
P-Channel 2.5V Specified PowerTrenchTM MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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Absolute Maximum Ratings
Symbol Parameter
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
D
©1999 Fairchild Semiconductor
General Description
J
This
Fairchild Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.
These devices are well suited for battery power applications: load
switching and power management, battery charging circuits, and
DC/DC conversion.
DSS
GSS
D
FDC638P
P-Channel 2.5V Specified PowerTrench
,T
JA
JC
STG
SOT-23
P -Channel
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
SuperSOT
2.5V specified
SuperSOT
- Pulsed
D
TM
-6
T
A
D
= 25°C unless otherwise note
TM
pin 1
MOSFET is produced using
-6
S
D
D
SuperSOT
(Note 1a)
(Note 1)
G
(Note 1a)
(Note 1b)
(Note 1a)
TM
-8
TM
Features
MOSFET
-4.5 A, -20 V. R
Low gate charge (13nC typical).
High performance trench technology for extremely low R
SuperSOT
SO-8); low profile (1mm thick).
SO-8
TM
-6 package: small footprint (72% smaller than standard
2
3
3
1
R
DS(ON)
DS(ON)
-55 to 150
Ratings
-4.5
-20
-20
1.6
0.8
±8
78
30
= 0.045
SOT-223
= 0.065
@ V
@ V
GS
GS
= -4.5 V
= -2.5 V.
6
5
4
SOIC-16
June 1999
FDC638P Rev.D
DS(ON)
Units
°C/W
°C/W
°C
W
V
V
A
.

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FDC638 Summary of contents

Page 1

... SO-8); low profile (1mm thick). TM SuperSOT -8 SO (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) June 1999 = 0.045 @ V = -4.5 V DS(ON 0.065 @ V = -2.5 V. DS(ON package: small footprint (72% smaller than standard SOT-223 SOIC- Ratings -20 ±8 -4.5 -20 1.6 0.8 -55 to 150 DS(ON) Units °C °C/W °C/W FDC638P Rev.D ...

Page 2

... -1.3 A (Note Min Typ Max Units - -18 mV µA -10 µA 100 nA -100 nA -0.4 -0.9 -1 mV/ C 0.039 0.045 0.054 0.072 0.057 0.065 -20 A 6.5 S 1240 pF 270 pF 100 1 -1.3 A -0.75 -1 FDC638P Rev.D ...

Page 3

... Figure 2. On-Resistance Variation with Drain Current and Gate Voltage . 125° GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125°C J 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature -2.0A 25°C 5 1.4 FDC638P Rev.B ...

Page 4

... DRAIN TO SOURCE VOLTAGE ( SINGLE PULSE JA R =156°C 25° 100 SINGLE PULSE TIME (SEC) Dissipation. R ( 156°C/W P(pk ( Duty Cycle 100 300 FDC638P Rev.B 20 300 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

Page 6

... Pizza Box fo r Standar d Opti on SSOT-6 Tape Leader and Trailer Configuration: Figur e 2.0 Carrier Tape Cover Tape Traile r Tape 300mm mi nimum or 75 empty poc kets 1998 Fairchild Semiconductor Corporation Anti static Cover Tape Embossed F63TNR Carrier Tape Label 631 D87Z SSOT-6 Unit Orientation ...

Page 7

SuperSOT TM -6 Tape and Reel Data and Package Dimensions, continued SSOT-6 Embossed Carrier Tape Configuration: Figure 3 Pkg type SSOT-6 3.23 3.18 8.0 1.55 +/-0.10 +/-0.10 +/-0.3 +/-0.05 (8mm) Notes: ...

Page 8

... SuperSOT TM -6 Tape and Reel Data and Package Dimensions, continued SuperSOT -6 (FS PKG Code 31, 33) 1998 Fairchild Semiconductor Corporation Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0158 September 1998, Rev. A ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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