FDC638 Fairchild Semiconductor, FDC638 Datasheet - Page 3

• Manufacturer Part Number: FDC638
• Description: P-Channel 2.5V Specified PowerTrenchTM MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
20
16
12
1.6
1.4
1.2
0.8
0.6
8
4
0
20
16
12
1
-50
8
4
0
0
Figure 3. On-Resistance Variation
0
V
V
GS
V
I = -4.5A
DS
Figure 1. On-Region Characteristics.
Figure 5.Transfer Characteristics.
D
GS
= -4.5V
= -5V
-25
= -4.5V
1
0.8
-3.0V
-V
-V
T , JUNCTION TEMPERATURE (°C)
- 2.5V
0
with Temperature.
GS
DS
J
, DRAIN-SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
- 2.0V
25
2
1.6
T = -55°C
J
50
3
2.4
75
125°C
100
25°C
4
3.2
125
150
5
4
0.15
0.12
0.09
0.06
0.03
0.001
1.6
1.4
1.2
0.8
0.01
1
0.1
20
10
0
0
1
Figure 4. On Resistance Variation with
1
0
Figure 6. Body Diode Forward Voltage
V
V
Figure 2. On-Resistance Variation with
GS
GS
= 0V
= -2.5V
0.2
-V
- V
SD
5
GS
, BODY DIODE FORWARD VOLTAGE (V)
2
Gate-to-Source Voltage.
Drain Current and Gate Voltage .
0.4
Variation with Source Current
and Temperature.
, GATE TO SOURCE VOLTAGE (V)
T = 125°C
J
- I , DRAIN CURRENT (A)
-3.0V
D
0.6
25°C
10
-55°C
3
-3.5V
0.8
-4.0V
1
15
4
T = 125°C
A
I
D
-4.5V
1.2
FDC638P Rev.B
= -2.0A
25°C
1.4
20
5