FDN357N Fairchild Semiconductor, FDN357N Datasheet - Page 2
FDN357N
Manufacturer Part Number
FDN357N
Description
MOSFET N-CH 30V 1.9A SSOT3
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDN357N.pdf
(5 pages)
Specifications of FDN357N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 2.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
5.9nC @ 5V
Input Capacitance (ciss) @ Vds
235pF @ 10V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.6 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.9 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN357NTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDN357N
Manufacturer:
Fairchild Semiconductor
Quantity:
108 765
Part Number:
FDN357N
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDN357N-NL
Manufacturer:
ON/安森美
Quantity:
20 000
Change To
Pg. 2