FDFMA2P853 Fairchild Semiconductor, FDFMA2P853 Datasheet

MOSFET P-CH 20V 3A MICROFET6

FDFMA2P853

Manufacturer Part Number
FDFMA2P853
Description
MOSFET P-CH 20V 3A MICROFET6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDFMA2P853

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
120 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
435pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDFMA2P853TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDFMA2P853
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
FDFMA2P853
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDFMA2P853(853N)
Manufacturer:
MOT
Quantity:
1 240
©2008 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDFMA2P853
Integrated P-Channel PowerTrench
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low forward voltage schottky diode for minimum
conduction losses.
The MicroFET 2x2 package offers exceptional thermal
perfo
mode applications.
V
V
I
V
I
P
T
R
R
R
R
D
O
J
DSS
GSS
RRM
D
Symbol
, T
JA
JA
JA
JA
Device Marking
STG
rmance for it's physica
.853
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current -Continuous
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation for Single Operation
Power dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
l size and is well suited to linear
-Pulsed
FDFMA2P853
MicroFET
Device
Parameter
T
A
= 25°C unless otherwise noted
C
C
A
Reel Size
G
7inch
NC D
D
S
Features
1
®
MOSFET:
Schottky:
V
F
-3.0 A, -20V. R
Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
RoHS Compliant
MOSFET and Schottky Diode
< 0.46 V @ 500 mA
(Note 1a)
Tape Width
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
8mm
R
R
NC
DS(ON)
DS(ON)
A
D
DS(ON)
1
2
3
= 160 m
= 240 m
= 120 m
-55 to +150
Ratings
-3.0
173
140
-20
1.4
0.7
30
86
86
-6
1
8
@ V
@ V
@ V
FDFMA2P853 Rev. D2 (W)
3000 units
September 2008
Quantity
GS
GS
GS
= -2.5 V
= -1.8 V
6
5
4
= -4.5 V
C
G
S
Units
o
C/W
o
W
V
V
A
A
C
V

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FDFMA2P853 Summary of contents

Page 1

... Reel Size Tape Width 7inch 8mm 1 September 2008 = 120 -4.5 V DS(ON 160 -2.5 V DS(ON 240 -1.8 V DS(ON Ratings Units - -3 1.4 W 0.7 o -55 to +150 C 86 173 o C/W 86 140 Quantity 3000 units FDFMA2P853 Rev. D2 (W) ...

Page 2

... Min Typ Max Units –20 V mV/ C –12 –1 A ±100 nA –0.4 –0.7 –1 120 m 120 160 172 240 118 160 – 435 0.8 nC 0.9 nC –1.1 A –0.8 –1.2 V (Note 9 2 9.9 100 0.4 0.46 V 0.3 0.35 0.5 0.55 V 0.49 0.54 FDFMA2P853 Rev D2 (W) ...

Page 3

... PCB 2 pad copper, 1.5" x 1.5" x 0.062" thick PCB o b) 173 C/W when mounted on a minimum pad copper 3 is guaranteed 140 C C/W when when mounted on mounted 2 a minimum on a 1in pad of pad copper copper FDFMA2P853 Rev. D2 (W) ...

Page 4

... Body Diode Forward Voltage Variation with Source Current and Temperature 4 = -1.5V -2.0V -2.5V -3.0V -3. DRAIN CURRENT (A) D On-Resistance Variation with I = -1. 125 GATE TO SOURCE VOLTAGE (V) GS On-Resistance Variation with Gate-to-Source Voltage = 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDFMA2P853 Rev. D2 (W) -4. 1.2 ...

Page 5

... Transient thermal response will change depending on the circuit board design. 700 600 500 -15V 400 -10V 300 200 100 C rss Figure 8. 0.01 0.001 0.0001 0.00001 0.000001 0.6 0.7 0.8 0 Figure 10 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS Capacitance Characteristics 125 REVERSE VOLTAGE (V) R Schottky Diode Reverse Current FDFMA2P853 Rev ...

Page 6

... Dimensional Outline and Pad Layout rev3 6 FDFMA2P853 Rev. D2 (W) ...

Page 7

... Semiconductor. The datasheet is for reference information only. 7 ® The Power Franchise tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition FDFMA2P853 Rev. D2 (W) ® Rev. I36 ...

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