FDFMA2P853 Fairchild Semiconductor, FDFMA2P853 Datasheet - Page 2

• Manufacturer Part Number: FDFMA2P853
• Description: MOSFET P-CH 20V 3A MICROFET6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFMA2P853

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 435pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFMA2P853TR

Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
Schottky Diode Characteristics
I
I
V
V
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
R
R
FS
BV
V
GS(th)
SD
F
F
DS(on)
iss
oss
rss
g
gs
gd
rr
GS(th)
DSS
T
T
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Reverse Leakage
Reverse Leakage
Forward Voltage
Forward Voltage
Parameter
(Note 2)
(Note 2)
T
A
= 25°C unless otherwise noted
2
V
I
V
V
V
I
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
I
dI
V
V
I
I
D
D
F
F
F
GS
DS
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
R
R
F
= 500mA
= 1A
= –3.0 A,
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
/dt = 100 A/µs
= 5 V
= 20 V
= –4.5 V, I
= 0 V,
= –16 V,
= ± 8 V,
= V
= –4.5 V, I
= –2.5 V, I
= –1.8 V, I
= –4.5 V, V
= –5 V,
= –10 V,
= –10 V,
= –4.5 V, R
= –10 V,
= –4.5 V
= 0 V,
Test Conditions
GS
,
D
V
I
I
I
V
V
I
= –3.0 A, T
I
I
D
D
D
D
D
D
D
D
S
DS
GS
DS
GEN
GS
= –250 A
= –250 A
= –3.0 A
= –2.5 A
= –1.0 A
= –3.0 A
= –1 A,
= –3.0 A,
= –1.1 A
= –5 V
= 0 V
= 0 V
= 0 V,
T
T
T
T
T
T
T
T
T
= 6
J
J
J
J
J
J
J
J
J
= 25 C
= 125 C
= 25 C
= 85 C
= 125 C
= 25 C
= 125 C
= 25 C
= 125 C
J
=125 C
(Note 2)
Min Typ Max Units
–0.4
–20
–20
–0.7
–0.8
0.49
–12
120
172
118
435
0.8
0.9
9.9
2.3
9.9
0.3
2.3
0.4
0.3
0.5
80
45
11
17
90
15
2
7
9
6
4
6
FDFMA2P853 Rev D2 (W)
±100
–1.3
–1.1
–1.2
0.46
0.35
0.55
0.54
120
160
240
160
100
–1
18
19
27
12
50
10
10
6
1
mV/ C
mV/ C
m
mA
mA
mA
nC
nC
nC
nA
pF
pF
pF
nC
ns
ns
ns
ns
ns
V
V
A
S
A
V
V
V
A
A
A