FDC6392S Fairchild Semiconductor, FDC6392S Datasheet - Page 3

MOSFET P-CH 20V 2.2A SSOT-6

FDC6392S

Manufacturer Part Number
FDC6392S
Description
MOSFET P-CH 20V 2.2A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDC6392S

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
150 mOhm @ 2.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
5.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
369pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6392STR
FDC6392S_NL
FDC6392S_NLTR
FDC6392S_NLTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDC6392S_NL
Quantity:
12 122
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Electrical Characteristics
the drain pins. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJC
is guaranteed by design while R
a) 130 °C/W when
mounted on a 0.125
in
copper.
2
pad of 2 oz.
θCA
is determined by the user's board design.
T
A
b) 140°C/W when mounted
= 25°C unless otherwise noted
on a .004 in
copper
2
pad of 2 oz
c) 180°C/W when mounted on a
minimum pad.
FDC6392S Rev C(W)

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