FDC6392S Fairchild Semiconductor, FDC6392S Datasheet - Page 4

• Manufacturer Part Number: FDC6392S
• Description: MOSFET P-CH 20V 2.2A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6392S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 150 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 369pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6392STR; FDC6392S_NL; FDC6392S_NLTR; FDC6392S_NLTR

Typical Characteristics
1.6
1.4
1.2
0.8
0.6
6
5
4
3
2
1
0
Figure 3. On-Resistance Variation with
5
4
3
2
1
0
1
0.5
-50
Figure 1. On-Region Characteristics.
0
Figure 5. Transfer Characteristics.
V
V
DS
GS
V
-3.5V
I
GS
D
= -5V
= -4.5V
-25
= -2.2A
= -4.5V
0.5
1
-V
-V
T
0
GS
J
DS
, JUNCTION TEMPERATURE (
Temperature.
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
-3.0V
25
1.5
1
50
T
A
= -55
-2.5V
1.5
2
75
o
C
125
o
100
C)
o
C
2.5
2
-2.0V
25
125
o
C
2.5
150
3
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
0.35
0.25
0.15
0.05
0.1
0.3
0.2
0.1
10
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
2
1
0
1
0
V
Drain Current and Gate Voltage.
GS
V
GS
T
= 0V
A
= -2.0V
= 25
Gate-to-Source Voltage.
0.2
-V
1
o
C
SD
-2.5V
-V
, BODY DIODE FORWARD VOLTAGE (V)
2
T
GS
A
, GATE TO SOURCE VOLTAGE (V)
= 125
0.4
- I
2
D
, DRAIN CURRENT (A)
o
-3.0V
C
25
0.6
o
3
C
3
T
A
-3.5V
= 125
-55
o
C
0.8
o
C
4
4
FDC6392S Rev C(W)
-4.5V
I
D
1
5
= -1.1A
1.2
6
5