FDS6675 Fairchild Semiconductor, FDS6675 Datasheet - Page 2

• Manufacturer Part Number: FDS6675
• Description: MOSFET P-CH 30V 11A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6675

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 5V
• Input Capacitance (ciss) @ Vds: 3000pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6675TR

Electrical Characteristics (
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
DSS
GSSF
GSSR
D(ON)
D(on)
r
D(off)
f
S
Notes:
1. R
FS
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
BV
GS(th)
V
DS(ON)
iss
oss
rss
SD
g
gs
gd
DSS
GS(th)
guaranteed by design while R
Scale 1 : 1 on letter size paper
DSS
JA
/ T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
/ T
J
J
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage Temp. Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
CA
(Note 2)
is determined by the user's board design.
a. 50
T
(Note 2)
of 2oz copper.
A
O
= 25
C/W on a 1 in
O
C unless otherwise noted )
2
pad
Conditions
V
I
V
V
V
V
I
V
V
V
V
V
V
V
V
V
V
D
D
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DS
GEN
DS
GS
GS
= -250 µA, Referenced to 25
= 250 µA, Referenced to 25
= -15 V, I
= -5 V
= 0 V, I
= -24 V, V
= 20 V, V
= -20 V, V
= V
= -10 V, I
= -4.5 V, I
= -10 V, V
= -10 V, I
= -15 V, V
= -15 V, I
= 0 V, I
= -10 V, R
GS
, I
b. 105
D
S
pad of 2oz copper.
D
= -2.1 A
= -250 µA
= -250 µA
DS
D
D
D
D
GS
GS
O
DS
DS
D
GEN
C/W on a 0.04 in
= -1 A
= -11 A
= -11 A,
= -11 A
= 0 V
= -9 A
= 0 V
= 0 V
= -5 V
= 0 V,
= 6
(Note 2)
T
T
2
J
J
= 55°C
=125°C
o
o
C
C
Min
-30
-50
-1
Typ
0.011
0.015
0.016
3000
-0.72
-1.7
870
360
100
-22
32
12
16
50
30
11
c. 125
4.3
9
of 2oz copper.
O
C/W on a 0.006 in
0.014
0.023
Max
-100
0.02
100
140
-2.1
-1.2
-10
22
27
80
42
-1
-3
FDS6675 Rev.C2
mV/
mV/
2
Units
pad
nC
nC
nC
µA
µA
nA
nA
ns
ns
ns
ns
V
V
A
S
pF
pF
pF
A
V
JC
o
o
C
C
is