FDS6675 Fairchild Semiconductor, FDS6675 Datasheet - Page 3

• Manufacturer Part Number: FDS6675
• Description: MOSFET P-CH 30V 11A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6675

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 5V
• Input Capacitance (ciss) @ Vds: 3000pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 11A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6675TR

Typical Electrical Characteristics
50
40
30
20
10
50
40
30
20
10
0
0
0
Figure 3. On-Resistance Variation with
Figure 5. Transfer Characteristics.
Figure 1. On-Region Characteristics.
1.6
1.4
1.2
0.8
0.6
1
V
1
V
GS
-50
DS
= -10V
= -5.0V
V
I = -11A
-25
D
GS
Temperature.
0.6
-6.0V
- V
= -10V
- V
-4.5V
GS
2
DS
T , JUNCTION TEMPERATURE (° C)
0
J
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
-3.5V
1.2
25
T = -55° C
J
-3.0V
3
50
1.8
75
125° C
100
25° C
4
2.4
125
150
3
5
0.001
0.05
0.04
0.03
0.02
0.01
0.01
2.5
1.5
0.5
0.1
50
10
2
1
0
Figure 4. On-Resistance Variation with
Figure 2. On-Resistance Variation with
1
0
0
0
Figure 6. Body Diode Forward Voltage
V
V
GS
GS
= -3.5V
= 0V
- V
10
2
SD
- V
Gate-to-Source Voltage.
Dain Current and Gate Voltage.
Variation with Source Current
and Temperature.
GS
, BODY DIODE FORWARD VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
- I
-4.0V
0.4
D
T = 125° C
J
, DRAIN CURRENT (A)
20
4
-4.5 V
25° C
30
-5.5V
6
-55° C
T = 125° C
0.8
J
-7.0V
25° C
I = -5.5A
40
D
8
-10V
FDS6675 Rev.C2
50
1.2
10