FDB14N30TM Fairchild Semiconductor, FDB14N30TM Datasheet - Page 2

• Manufacturer Part Number: FDB14N30TM
• Description: MOSFET N-CH 300V 14A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDB14N30TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 1060pF @ 25V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohms @ 10 V
• Forward Transconductance Gfs (max / Min): 10.5 S
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB14N30TMTR

FDB14N30 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2.8mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
ΔBV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
d(on)
d(off)
f
DSS
GSSF
GSSR
r
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
ΔT
≤ 14A, di/dt ≤ 200A/μs, V
DSS
FDB14N30
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 14A, V
DD
= 50V, R
DD
≤ BV
FDB14N30TM
Parameter
Device
G
DSS
= 25Ω, Starting T
, Starting T
J
= 25°C
T
J
C
= 25°C
= 25°C unless otherwise noted
Package
D2-PAK
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
G
DS
GS
GS
GS
F
= 250μA, Referenced to 25°C
/dt =100A/μs
= 25Ω
= 300V, V
= 240V, T
= V
= 40V, I
= 25V, V
= 240V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 150V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 250μA
= 14A
= 14A
DS
GS
D
D
DS
= 7A
C
= 7A
GS
= 250μA
= 14A
= 14A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
330mm
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
24mm
Min.
300
3.0
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Typ.
0.24
10.5
815
150
105
235
0.3
4.5
1.6
17
20
30
75
18
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8
Quantity
Max Units
1060
-100
0.29
100
195
120
160
www.fairchildsemi.com
5.0
1.4
10
25
50
70
25
14
56
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1
800
V/°C
μA
μA
nA
nA
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
Ω
S
A
A
V